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ONSEMI

Onsemi Mmbt5551Lt1G

About The TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:160V; Transition Frequency ft:-; Power Dissipation Pd:225mW; DC Collector Current:600mA; DC Current Gain hFE:80hFE; Transistor Case Style:SOT-23; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:MMBTxxxx Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):150mV; Current Ic Continuous a Max:50mA; Hfe Min:80; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device

TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:160V; Transition Frequency ft:-; Power Dissipation Pd:225mW; DC Collector Current:600mA; DC Current Gain hFE:80hFE; Transistor Case Style:SOT-23; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:MMBTxxxx Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):150mV; Current Ic Continuous a Max:50mA; Hfe Min:80; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device

Semiconductors - Discretes

Onsemi Mmbt5551Lt1G

Semiconductors - Discretes

Specifications of Onsemi Mmbt5551Lt1G

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Onsemi Mmbt5551Lt1G
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TRANSISTOR, NPN, SOT-323; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation Pd:150mW; DC Collector Current:200mA; DC Current Gain hFE:300hFE; Transistor Case Style:SOT-323; No.

TRANSISTOR, NPN, SOT-323; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation Pd:150mW; DC Collector Current:200mA; DC Current Gain hFE:300hFE; Transistor Case Style:SOT-323; No.

Onsemi Mmbt3904Wt1G of Pins:3Pins; Operating Temperature Max:150°C; Product Range:MMBTxxxx Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):200mV; Complementary Device:MMBT3906WT1G; Continuous Collector Current Ic Max:200mA; Current Ic Continuous a Max:50mA; Current Ic hFE:100mA; Gain Bandwidth ft Typ:300MHz; Hfe Min:30; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pin Configuration:B(1), C(3), E(2); Power Dissipation Ptot Max:150mW; Termination Type:Surface Mount Device; Voltage Vcbo:60V.

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    • TRANSISTOR, NPN, SC-75; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation Pd:200mW; DC Collector Current:200mA; DC Current Gain hFE:300hFE; Transistor Case Style:SOT-416; No.

    TRANSISTOR, NPN, SC-75; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation Pd:200mW; DC Collector Current:200mA; DC Current Gain hFE:300hFE; Transistor Case Style:SOT-416; No.

    Onsemi Mmbt3904Tt1G of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):200mV; Current Ic Continuous a Max:50mA; Current Ic hFE:300mA; Gain Bandwidth ft Typ:300MHz; Hfe Min:30; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device.

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    • TRANSISTOR, BJT, PNP, -60V, -0.6A,SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency ft:200MHz; Power Dissipation Pd:225mW; DC Collector Current:-600mA; DC Current Gain hFE:200hFE; Transistor Case Style:SOT-23; No.

    TRANSISTOR, BJT, PNP, -60V, -0.6A,SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency ft:200MHz; Power Dissipation Pd:225mW; DC Collector Current:-600mA; DC Current Gain hFE:200hFE; Transistor Case Style:SOT-23; No.

    Onsemi Mmbt2907Alt1G of Pins:3Pins; Operating Temperature Max:150°C; Product Range:MMBTxxxx Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):400mV; Gain Bandwidth ft Typ:200MHz; Hfe Min:50; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device.

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    • TRANSISTOR, NPN, 40V, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation Pd:225mW; DC Collector Current:600mA; DC Current Gain hFE:300hFE; Transistor Case Style:SOT-23; No.

    TRANSISTOR, NPN, 40V, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation Pd:225mW; DC Collector Current:600mA; DC Current Gain hFE:300hFE; Transistor Case Style:SOT-23; No.

    Onsemi Mmbt2222Alt1G of Pins:3Pins; Operating Temperature Max:150°C; Product Range:MMBTxxxx Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):300mV; Current Ic hFE:300mA; DC Current Gain Hfe Min:100; Gain Bandwidth ft Typ:300MHz; Hfe Min:100; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Peak Current Icm:1.1A; Termination Type:Surface Mount Device.

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    • DIODE, SIGNAL, 100V, SOT-23; Diode Configuration:Dual Series; Repetitive Reverse Voltage Vrrm Max:100V; Forward Current If(AV):200mA; Forward Voltage VF Max:1.1V; Reverse Recovery Time trr Max:4ns; Forward Surge Current Ifsm Max:500mA; Operating Temperature Max:150°C; Diode Case Style:SOT-23; No.

    DIODE, SIGNAL, 100V, SOT-23; Diode Configuration:Dual Series; Repetitive Reverse Voltage Vrrm Max:100V; Forward Current If(AV):200mA; Forward Voltage VF Max:1.1V; Reverse Recovery Time trr Max:4ns; Forward Surge Current Ifsm Max:500mA; Operating Temperature Max:150°C; Diode Case Style:SOT-23; No.

    Onsemi Mmbd7000Lt1G of Pins:3Pins; Product Range:MMBD7 Series; Automotive Qualification Standard:AEC-Q101; SVHC:No SVHC (27-Jun-2018); Junction Temperature Tj Max:150°C; Reverse Recovery Time trr Typ:4ns; Termination Type:Surface Mount Device.

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    • DIODE, SIGNAL, 70V, SOT-23; Diode Configuration:Dual Common Cathode; Repetitive Reverse Voltage Vrrm Max:70V; Forward Current If(AV):200mA; Forward Voltage VF Max:1.1V; Reverse Recovery Time trr Max:4ns; Forward Surge Current Ifsm Max:500mA; Operating Temperature Max:150°C; Diode Case Style:SOT-23; No.

    DIODE, SIGNAL, 70V, SOT-23; Diode Configuration:Dual Common Cathode; Repetitive Reverse Voltage Vrrm Max:70V; Forward Current If(AV):200mA; Forward Voltage VF Max:1.1V; Reverse Recovery Time trr Max:4ns; Forward Surge Current Ifsm Max:500mA; Operating Temperature Max:150°C; Diode Case Style:SOT-23; No.

    Onsemi Mmbd6100Lt1G of Pins:3Pins; Product Range:MMBD6 Series; Automotive Qualification Standard:AEC-Q101; SVHC:No SVHC (27-Jun-2018); Junction Temperature Tj Max:150°C; Reverse Recovery Time trr Typ:4ns; Termination Type:Surface Mount Device.

  • Eletrônicos
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  • Semiconductors - Discretes
  • ONSEMI
    • TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:160V; Transition Frequency ft:-; Power Dissipation Pd:225mW; DC Collector Current:600mA; DC Current Gain hFE:80hFE; Transistor Case Style:SOT-23; No.

    TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:160V; Transition Frequency ft:-; Power Dissipation Pd:225mW; DC Collector Current:600mA; DC Current Gain hFE:80hFE; Transistor Case Style:SOT-23; No.

    Onsemi Mmbt5551Lt1G of Pins:3Pins; Operating Temperature Max:150°C; Product Range:MMBTxxxx Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):150mV; Current Ic Continuous a Max:50mA; Hfe Min:80; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device.

  • Eletrônicos
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  • ONSEMI
    • TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-150V; Transition Frequency ft:300MHz; Power Dissipation Pd:225mW; DC Collector Current:-500mA; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-23; No.

    TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-150V; Transition Frequency ft:300MHz; Power Dissipation Pd:225mW; DC Collector Current:-500mA; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-23; No.

    Onsemi Mmbt5401Lt1G of Pins:3Pins; Operating Temperature Max:150°C; Product Range:MMBTxxxx Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):200mV; Current Ic Continuous a Max:50mA; Gain Bandwidth ft Typ:300MHz; Hfe Min:60; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:160V; Transition Frequency ft:-; Power Dissipation Pd:225mW; DC Collector Current:600mA; DC Current Gain hFE:80hFE; Transistor Case Style:SOT-23; No.

    TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:160V; Transition Frequency ft:-; Power Dissipation Pd:225mW; DC Collector Current:600mA; DC Current Gain hFE:80hFE; Transistor Case Style:SOT-23; No.

    Onsemi Mmbt5551Lt1G of Pins:3Pins; Operating Temperature Max:150°C; Product Range:MMBTxxxx Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):150mV; Current Ic Continuous a Max:50mA; Hfe Min:80; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-150V; Transition Frequency ft:300MHz; Power Dissipation Pd:225mW; DC Collector Current:-500mA; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-23; No.

    TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-150V; Transition Frequency ft:300MHz; Power Dissipation Pd:225mW; DC Collector Current:-500mA; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-23; No.

    Onsemi Mmbt5401Lt1G of Pins:3Pins; Operating Temperature Max:150°C; Product Range:MMBTxxxx Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):200mV; Current Ic Continuous a Max:50mA; Gain Bandwidth ft Typ:300MHz; Hfe Min:60; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI