reorder
ALWAYS Be Happy search home
c
Combo Blog
Categories
Play Games New
Eletrônicos
Componentes e placas de circuitos
Semicondutores
Semiconductors - Discretes
ONSEMI

Onsemi Mmbt3904Tt1G

About The of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):200mV; Current Ic Continuous a Max:50mA; Current Ic hFE:300mA; Gain Bandwidth ft Typ:300MHz; Hfe Min:30; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device.TRANSISTOR, NPN, SC-75; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation Pd:200mW; DC Collector Current:200mA; DC Current Gain hFE:300hFE; Transistor Case Style:SOT-416; No

TRANSISTOR, NPN, SC-75; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation Pd:200mW; DC Collector Current:200mA; DC Current Gain hFE:300hFE; Transistor Case Style:SOT-416; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):200mV; Current Ic Continuous a Max:50mA; Current Ic hFE:300mA; Gain Bandwidth ft Typ:300MHz; Hfe Min:30; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device

Semiconductors - Discretes

Onsemi Mmbt3904Tt1G

Semiconductors - Discretes

Specifications of Onsemi Mmbt3904Tt1G

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
Instockinstock

Last Updated

Onsemi Mmbt3904Tt1G
More Varieties
Eletrônicos
Componentes e placas de circuitos

Rating :- 8.09 /10
Votes :- 51
TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:160V; Transition Frequency ft:-; Power Dissipation Pd:225mW; DC Collector Current:600mA; DC Current Gain hFE:80hFE; Transistor Case Style:SOT-23; No.

TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:160V; Transition Frequency ft:-; Power Dissipation Pd:225mW; DC Collector Current:600mA; DC Current Gain hFE:80hFE; Transistor Case Style:SOT-23; No.

Onsemi Mmbt5551Lt1G of Pins:3Pins; Operating Temperature Max:150°C; Product Range:MMBTxxxx Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):150mV; Current Ic Continuous a Max:50mA; Hfe Min:80; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-150V; Transition Frequency ft:300MHz; Power Dissipation Pd:225mW; DC Collector Current:-500mA; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-23; No.

    TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-150V; Transition Frequency ft:300MHz; Power Dissipation Pd:225mW; DC Collector Current:-500mA; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-23; No.

    Onsemi Mmbt5401Lt1G of Pins:3Pins; Operating Temperature Max:150°C; Product Range:MMBTxxxx Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):200mV; Current Ic Continuous a Max:50mA; Gain Bandwidth ft Typ:300MHz; Hfe Min:60; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-50V; Transition Frequency ft:40MHz; Power Dissipation Pd:225mW; DC Collector Current:-50mA; DC Current Gain hFE:40hFE; Transistor Case Style:SOT-23; No.

    TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-50V; Transition Frequency ft:40MHz; Power Dissipation Pd:225mW; DC Collector Current:-50mA; DC Current Gain hFE:40hFE; Transistor Case Style:SOT-23; No.

    Onsemi Mmbt5087Lt1G of Pins:3Pins; Operating Temperature Max:150°C; Product Range:MMBTxxxx Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):300mV; Current Ic Continuous a Max:10mA; Gain Bandwidth ft Typ:40MHz; Hfe Min:250; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • TRANSISTOR, PNP, SOT-323; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:250MHz; Power Dissipation Pd:150mW; DC Collector Current:200mA; DC Current Gain hFE:250hFE; Transistor Case Style:SOT-323; No.

    TRANSISTOR, PNP, SOT-323; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:250MHz; Power Dissipation Pd:150mW; DC Collector Current:200mA; DC Current Gain hFE:250hFE; Transistor Case Style:SOT-323; No.

    Onsemi Mmbt3906Wt1G of Pins:3Pins; Operating Temperature Max:150°C; Product Range:MMBTxxxx Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):250mV; Current Ic Continuous a Max:50mA; Current Ic hFE:300mA; Gain Bandwidth ft Typ:250MHz; Hfe Min:100; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; Transition Frequency ft:250MHz; Power Dissipation Pd:225mW; DC Collector Current:-200mA; DC Current Gain hFE:300hFE; Transistor Case Style:SOT-23; No.

    TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; Transition Frequency ft:250MHz; Power Dissipation Pd:225mW; DC Collector Current:-200mA; DC Current Gain hFE:300hFE; Transistor Case Style:SOT-23; No.

    Onsemi Mmbt3906Lt1G of Pins:3Pins; Operating Temperature Max:150°C; Product Range:MMBTxxxx Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):250mV; Current Ic Continuous a Max:50mA; Current Ic hFE:300mA; Gain Bandwidth ft Typ:250MHz; Hfe Min:30; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Ptot Max:300mW; Termination Type:Surface Mount Device.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • TRANSISTOR, NPN, SOT-323; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation Pd:150mW; DC Collector Current:200mA; DC Current Gain hFE:300hFE; Transistor Case Style:SOT-323; No.

    TRANSISTOR, NPN, SOT-323; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation Pd:150mW; DC Collector Current:200mA; DC Current Gain hFE:300hFE; Transistor Case Style:SOT-323; No.

    Onsemi Mmbt3904Wt1G of Pins:3Pins; Operating Temperature Max:150°C; Product Range:MMBTxxxx Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):200mV; Complementary Device:MMBT3906WT1G; Continuous Collector Current Ic Max:200mA; Current Ic Continuous a Max:50mA; Current Ic hFE:100mA; Gain Bandwidth ft Typ:300MHz; Hfe Min:30; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pin Configuration:B(1), C(3), E(2); Power Dissipation Ptot Max:150mW; Termination Type:Surface Mount Device; Voltage Vcbo:60V.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • TRANSISTOR, NPN, SC-75; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation Pd:200mW; DC Collector Current:200mA; DC Current Gain hFE:300hFE; Transistor Case Style:SOT-416; No.

    TRANSISTOR, NPN, SC-75; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation Pd:200mW; DC Collector Current:200mA; DC Current Gain hFE:300hFE; Transistor Case Style:SOT-416; No.

    Onsemi Mmbt3904Tt1G of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):200mV; Current Ic Continuous a Max:50mA; Current Ic hFE:300mA; Gain Bandwidth ft Typ:300MHz; Hfe Min:30; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • TRANSISTOR, BJT, PNP, -60V, -0.6A,SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency ft:200MHz; Power Dissipation Pd:225mW; DC Collector Current:-600mA; DC Current Gain hFE:200hFE; Transistor Case Style:SOT-23; No.

    TRANSISTOR, BJT, PNP, -60V, -0.6A,SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency ft:200MHz; Power Dissipation Pd:225mW; DC Collector Current:-600mA; DC Current Gain hFE:200hFE; Transistor Case Style:SOT-23; No.

    Onsemi Mmbt2907Alt1G of Pins:3Pins; Operating Temperature Max:150°C; Product Range:MMBTxxxx Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):400mV; Gain Bandwidth ft Typ:200MHz; Hfe Min:50; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • TRANSISTOR, NPN, SC-75; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation Pd:200mW; DC Collector Current:200mA; DC Current Gain hFE:300hFE; Transistor Case Style:SOT-416; No.

    TRANSISTOR, NPN, SC-75; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation Pd:200mW; DC Collector Current:200mA; DC Current Gain hFE:300hFE; Transistor Case Style:SOT-416; No.

    Onsemi Mmbt3904Tt1G of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):200mV; Current Ic Continuous a Max:50mA; Current Ic hFE:300mA; Gain Bandwidth ft Typ:300MHz; Hfe Min:30; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • TRANSISTOR, BJT, PNP, -60V, -0.6A,SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency ft:200MHz; Power Dissipation Pd:225mW; DC Collector Current:-600mA; DC Current Gain hFE:200hFE; Transistor Case Style:SOT-23; No.

    TRANSISTOR, BJT, PNP, -60V, -0.6A,SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency ft:200MHz; Power Dissipation Pd:225mW; DC Collector Current:-600mA; DC Current Gain hFE:200hFE; Transistor Case Style:SOT-23; No.

    Onsemi Mmbt2907Alt1G of Pins:3Pins; Operating Temperature Max:150°C; Product Range:MMBTxxxx Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):400mV; Gain Bandwidth ft Typ:200MHz; Hfe Min:50; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI