Onsemi Mmbt3906Lt1G

Rating :- 9.99 /10

Votes :- 50

TRANSISTOR, NPN; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:25V; Transition Frequency ft:650MHz; Power Dissipation Pd:225mW; DC Collector Current:4mA; DC Current Gain hFE:60hFE; Transistor Case Style:SOT-23; No.

Onsemi Mmbth10Lt1G of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:MMBTxxxx Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):500mV; Current Ic Continuous a Max:4A; Gain Bandwidth ft Typ:650MHz; Hfe Min:60; Operating Temperature Min:-55Â°C; Operating Temperature Range:-55Â°C to +150Â°C; Power Dissipation Ptot Max:300mW; Termination Type:Surface Mount Device.

DIODE, ZENER, 1.8V, 0.5W, SOD-123; Zener Voltage Vz Typ:1.8V; Power Dissipation Pd:500mW; Diode Case Style:SOD-123; Zener Tolerance Â±:5%; No.

89V; Breakover Voltage Min:1.Onsemi Mmsz4678T1G of Pins:2Pins; Operating Temperature Max:150Â°C; Product Range:MMSZxxxT1G Series; Automotive Qualification Standard:AEC-Q101; SVHC:No SVHC (27-Jun-2018); Breakdown Voltage Max:1.8V; Operating Temperature Min:-55Â°C; Operating Temperature Range:-55Â°C to +150Â°C; Termination Type:Surface Mount Device; Test Current:50ÂµA.

TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:300V; Transition Frequency ft:50MHz; Power Dissipation Pd:225mW; DC Collector Current:500mA; DC Current Gain hFE:50hFE; Transistor Case Style:SOT-23; No.

Onsemi Mmbta42Lt1G of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:MMBTxxxx Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):500mV; Current Ic Continuous a Max:20mA; Gain Bandwidth ft Typ:50MHz; Hfe Min:40; Operating Temperature Min:-55Â°C; Operating Temperature Range:-55Â°C to +150Â°C; Termination Type:Surface Mount Device.

TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:160V; Transition Frequency ft:-; Power Dissipation Pd:225mW; DC Collector Current:600mA; DC Current Gain hFE:80hFE; Transistor Case Style:SOT-23; No.

Onsemi Mmbt5551Lt1G of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:MMBTxxxx Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):150mV; Current Ic Continuous a Max:50mA; Hfe Min:80; Operating Temperature Min:-55Â°C; Operating Temperature Range:-55Â°C to +150Â°C; Termination Type:Surface Mount Device.

TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-150V; Transition Frequency ft:300MHz; Power Dissipation Pd:225mW; DC Collector Current:-500mA; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-23; No.

Onsemi Mmbt5401Lt1G of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:MMBTxxxx Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):200mV; Current Ic Continuous a Max:50mA; Gain Bandwidth ft Typ:300MHz; Hfe Min:60; Operating Temperature Min:-55Â°C; Operating Temperature Range:-55Â°C to +150Â°C; Termination Type:Surface Mount Device.

TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-50V; Transition Frequency ft:40MHz; Power Dissipation Pd:225mW; DC Collector Current:-50mA; DC Current Gain hFE:40hFE; Transistor Case Style:SOT-23; No.

Onsemi Mmbt5087Lt1G of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:MMBTxxxx Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):300mV; Current Ic Continuous a Max:10mA; Gain Bandwidth ft Typ:40MHz; Hfe Min:250; Operating Temperature Min:-55Â°C; Operating Temperature Range:-55Â°C to +150Â°C; Termination Type:Surface Mount Device.

TRANSISTOR, PNP, SOT-323; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:250MHz; Power Dissipation Pd:150mW; DC Collector Current:200mA; DC Current Gain hFE:250hFE; Transistor Case Style:SOT-323; No.

Onsemi Mmbt3906Wt1G of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:MMBTxxxx Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):250mV; Current Ic Continuous a Max:50mA; Current Ic hFE:300mA; Gain Bandwidth ft Typ:250MHz; Hfe Min:100; Operating Temperature Min:-55Â°C; Operating Temperature Range:-55Â°C to +150Â°C; Termination Type:Surface Mount Device.

TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; Transition Frequency ft:250MHz; Power Dissipation Pd:225mW; DC Collector Current:-200mA; DC Current Gain hFE:300hFE; Transistor Case Style:SOT-23; No.

Onsemi Mmbt3906Lt1G of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:MMBTxxxx Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):250mV; Current Ic Continuous a Max:50mA; Current Ic hFE:300mA; Gain Bandwidth ft Typ:250MHz; Hfe Min:30; Operating Temperature Min:-55Â°C; Operating Temperature Range:-55Â°C to +150Â°C; Power Dissipation Ptot Max:300mW; Termination Type:Surface Mount Device.

TRANSISTOR, PNP, SOT-323; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:250MHz; Power Dissipation Pd:150mW; DC Collector Current:200mA; DC Current Gain hFE:250hFE; Transistor Case Style:SOT-323; No.

TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; Transition Frequency ft:250MHz; Power Dissipation Pd:225mW; DC Collector Current:-200mA; DC Current Gain hFE:300hFE; Transistor Case Style:SOT-23; No.