reorder
ALWAYS Be Happy search home
c
Combo Blog
Categories
Play Games New
Eletrônicos
Componentes e placas de circuitos
Semicondutores
Semiconductors - Discretes
NEXPERIA

Nexperia Bsn20Bkr

About The of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018).MOSFET, N-CHANNEL, 60V, 0

MOSFET, N-CHANNEL, 60V, 0.265A, SOT-23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:265mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):2.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power Dissipation Pd:310mW; Transistor Case Style:SOT-23; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)

Semiconductors - Discretes

Nexperia Bsn20Bkr

Semiconductors - Discretes

Specifications of Nexperia Bsn20Bkr

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
Instockinstock

Last Updated

Nexperia Bsn20Bkr
More Varieties
Eletrônicos
Componentes e placas de circuitos

Rating :- 9.99 /10
Votes :- 49
TRANS, AEC-Q101, 10K/10K, SOT-457-6; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:10kohm; Resistor Ratio, R1 / R2:1(Ratio); RF Transistor Case:SOT-457; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA
    • TVS DIODE, AEC-Q101, UNIDIR, SOD-123W; Product Range:PTVSxS1UTR Series; TVS Polarity:Unidirectional; Reverse Stand-Off Voltage Vrwm:3.3V; Clamping Voltage Vc Max:8V; Diode Case Style:SOD-123W; No.

    TVS DIODE, AEC-Q101, UNIDIR, SOD-123W; Product Range:PTVSxS1UTR Series; TVS Polarity:Unidirectional; Reverse Stand-Off Voltage Vrwm:3.3V; Clamping Voltage Vc Max:8V; Diode Case Style:SOD-123W; No.

    2V; Breakdown Voltage Max:6V; Peak Pulse Power Dissipation:-; Automotive Qualification Standard:AEC-Q101; SVHC:Lead (27-Jun-2018).Nexperia Ptvs3V3S1Utr,115 of Pins:2Pins; Breakdown Voltage Min:5.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Diodos
  • Circuit Protection
  • NEXPERIA
    • TRANS, AEC-Q101, 4K7/47K, SOT-363-6; Digital Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:-50V; Continuous Collector Current Ic:-100mA; Base Input Resistor R1:4.7kohm; Base-Emitter Resistor R2:47kohm; Resistor Ratio, R1 / R2:10(Ratio); RF Transistor Case:SOT-363; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA
    • TRANS, AEC-Q101, 10K/10K, SOT-457-6; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:10kohm; Resistor Ratio, R1 / R2:1(Ratio); RF Transistor Case:SOT-457; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA
    • MOSFET, P-CHANNEL, -20V, -1.2A, SOT-23-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-1.2A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.17ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-700mV; Power Dissipation Pd:335mW; Transistor Case Style:SOT-23; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA
    • MOSFET, AUTO, N AND P-CH, 60V, SOT666; Transistor Polarity:N and P Channel; Continuous Drain Current Id:330mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power Dissipation Pd:330mW; Transistor Case Style:SOT-666; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA
    • MOSFET, AUTO, DUAL N-CH, 60V, SOT-363; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:320mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.1V; Power Dissipation Pd:280mW; Transistor Case Style:SOT-363; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA
    • MOSFET, N-CHANNEL, 60V, 0.265A, SOT-23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:265mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):2.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power Dissipation Pd:310mW; Transistor Case Style:SOT-23; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA
    • MOSFET, AUTO, DUAL N-CH, 60V, SOT-363; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:320mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.1V; Power Dissipation Pd:280mW; Transistor Case Style:SOT-363; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA
    • MOSFET, N-CHANNEL, 60V, 0.265A, SOT-23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:265mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):2.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power Dissipation Pd:310mW; Transistor Case Style:SOT-23; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA