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RAYCHEM - TE CONNECTIVITY

Raychem - Te Connectivity Rw-200-E-1/2-0-Sp

Raychem - Te Connectivity Rw-200-E-1/2-0-Sp

D. Supplied - Imperial:0.25"; I.7mm; Shrink Tubing / Boot Colour:Black; Length - Imperial:98.

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  • RAYCHEM - TE CONNECTIVITY
    • Supplied - Imperial:0.75"; I.D.

    Supplied - Imperial:0.75"; I.D.

    43ft; Leng; Available until stocks are exhausted HEAT SHRINK TUBING, 19.D. Raychem - Te Connectivity Rw-200-E-3/4-0-Sp.

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  • RAYCHEM - TE CONNECTIVITY
    • Raychem - Te Connectivity Dr-25-3/8-0-Sp
  • Eletrônicos
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  • RAYCHEM - TE CONNECTIVITY
    • Raychem - Te Connectivity Dr-25-1/4-0-Sp

    Raychem - Te Connectivity Dr-25-1/4-0-Sp

    Recovered Max - Imperial:0.

  • Eletrônicos
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  • RAYCHEM - TE CONNECTIVITY
    • RECTIFIER, STANDARD, 0.25A, 300V, SOT143; Repetitive Reverse Voltage Vrrm Max:300V; Forward Current If(AV):250mA; Diode Configuration:Dual Isolated; Forward Voltage VF Max:1.1V; Reverse Recovery Time trr Max:-; Forward Surge Current Ifsm Max:4.5A; Operating Temperature Max:150°C; Diode Case Style:SOT-143B; No.
  • Eletrônicos
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  • Semiconductors - Discretes
  • NEXPERIA
    • RECTIFIER, STANDARD, 0.25A, 300V, SOT143; Repetitive Reverse Voltage Vrrm Max:300V; Forward Current If(AV):250mA; Diode Configuration:Dual Isolated; Forward Voltage VF Max:1.1V; Reverse Recovery Time trr Max:-; Forward Surge Current Ifsm Max:4.5A; Operating Temperature Max:150°C; Diode Case Style:SOT-143B; No.
  • Eletrônicos
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  • Semiconductors - Discretes
  • NEXPERIA
    • SW DIODE, 300V, 0.2A, SOT-23; Diode Configuration:Dual Series; Repetitive Reverse Voltage Vrrm Max:300V; Forward Current If(AV):200mA; Forward Voltage VF Max:1.1V; Reverse Recovery Time trr Max:50ns; Forward Surge Current Ifsm Max:9A; Operating Temperature Max:150°C; Diode Case Style:SOT-23; No.
  • Eletrônicos
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  • NEXPERIA
    • SW DIODE, AEC-Q101, 250V, 0.2A, SOT-457; Diode Configuration:Triple Isolated; Repetitive Reverse Voltage Vrrm Max:250V; Forward Current If(AV):200mA; Forward Voltage VF Max:1.25V; Reverse Recovery Time trr Max:50ns; Forward Surge Current Ifsm Max:16A; Operating Temperature Max:150°C; Diode Case Style:SOT-457; No.
  • Eletrônicos
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  • NEXPERIA
    • SW DIODE, 250V, 0.2A, SOD-123F; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:250V; Forward Current If(AV):200mA; Forward Voltage VF Max:1.25V; Reverse Recovery Time trr Max:50ns; Forward Surge Current Ifsm Max:9A; Operating Temperature Max:150°C; Diode Case Style:SOD-123F; No.
  • Eletrônicos
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  • NEXPERIA
    • SW DIODE, 250V, 0.2A, SOD-123F; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:250V; Forward Current If(AV):200mA; Forward Voltage VF Max:1.25V; Reverse Recovery Time trr Max:50ns; Forward Surge Current Ifsm Max:9A; Operating Temperature Max:150°C; Diode Case Style:SOD-123F; No.
  • Eletrônicos
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  • NEXPERIA
    • SW DIODE, AEC-Q101, 60V, 0.2A, SOT-143B; Diode Configuration:Dual Isolated; Repetitive Reverse Voltage Vrrm Max:60V; Forward Current If(AV):200mA; Forward Voltage VF Max:1V; Reverse Recovery Time trr Max:6ns; Forward Surge Current Ifsm Max:9A; Operating Temperature Max:150°C; Diode Case Style:SOT-143B; No.
  • Eletrônicos
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  • NEXPERIA
    • SW DIODE, 90V, 0.25A, SOT-363; Diode Configuration:Quad Common Anode; Repetitive Reverse Voltage Vrrm Max:90V; Forward Current If(AV):250mA; Forward Voltage VF Max:1.25V; Reverse Recovery Time trr Max:4ns; Forward Surge Current Ifsm Max:4A; Operating Temperature Max:150°C; Diode Case Style:SOT-363; No.
  • Eletrônicos
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  • NEXPERIA
    • MOSFET, N-CHANNEL, 60V, 0.265A, SOT-23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:265mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):2.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power Dissipation Pd:310mW; Transistor Case Style:SOT-23; No.
  • Eletrônicos
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  • NEXPERIA
    • SW DIODE, 300V, 0.2A, SOT-23; Diode Configuration:Dual Series; Repetitive Reverse Voltage Vrrm Max:300V; Forward Current If(AV):200mA; Forward Voltage VF Max:1.1V; Reverse Recovery Time trr Max:50ns; Forward Surge Current Ifsm Max:9A; Operating Temperature Max:150°C; Diode Case Style:SOT-23; No.
  • Eletrônicos
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  • NEXPERIA
    • SW DIODE, AEC-Q101, 250V, 0.2A, SOT-457; Diode Configuration:Triple Isolated; Repetitive Reverse Voltage Vrrm Max:250V; Forward Current If(AV):200mA; Forward Voltage VF Max:1.25V; Reverse Recovery Time trr Max:50ns; Forward Surge Current Ifsm Max:16A; Operating Temperature Max:150°C; Diode Case Style:SOT-457; No.
  • Eletrônicos
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  • Semiconductors - Discretes
  • NEXPERIA
    • SW DIODE, AEC-Q101, 60V, 0.2A, SOT-143B; Diode Configuration:Dual Isolated; Repetitive Reverse Voltage Vrrm Max:60V; Forward Current If(AV):200mA; Forward Voltage VF Max:1V; Reverse Recovery Time trr Max:6ns; Forward Surge Current Ifsm Max:9A; Operating Temperature Max:150°C; Diode Case Style:SOT-143B; No.
  • Eletrônicos
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  • Semiconductors - Discretes
  • NEXPERIA
    • SW DIODE, 90V, 0.25A, SOT-363; Diode Configuration:Quad Common Anode; Repetitive Reverse Voltage Vrrm Max:90V; Forward Current If(AV):250mA; Forward Voltage VF Max:1.25V; Reverse Recovery Time trr Max:4ns; Forward Surge Current Ifsm Max:4A; Operating Temperature Max:150°C; Diode Case Style:SOT-363; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA
    • MOSFET, N-CHANNEL, 60V, 0.265A, SOT-23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:265mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):2.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power Dissipation Pd:310mW; Transistor Case Style:SOT-23; No.
  • Eletrônicos
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  • NEXPERIA
    • MOSFET, AUTO, DUAL N-CH, 60V, SOT-363; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:320mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.1V; Power Dissipation Pd:280mW; Transistor Case Style:SOT-363; No.
  • Eletrônicos
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  • NEXPERIA
    • MOSFET, AUTO, N AND P-CH, 60V, SOT666; Transistor Polarity:N and P Channel; Continuous Drain Current Id:330mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power Dissipation Pd:330mW; Transistor Case Style:SOT-666; No.
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  • NEXPERIA
    • MOSFET, P-CHANNEL, -20V, -1.2A, SOT-23-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-1.2A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.17ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-700mV; Power Dissipation Pd:335mW; Transistor Case Style:SOT-23; No.
  • Eletrônicos
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  • Semicondutores
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  • NEXPERIA
    • TRANS, AEC-Q101, 10K/10K, SOT-457-6; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:10kohm; Resistor Ratio, R1 / R2:1(Ratio); RF Transistor Case:SOT-457; No.
  • Eletrônicos
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  • Semicondutores
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  • NEXPERIA
    • TRANS, AEC-Q101, 4K7/47K, SOT-363-6; Digital Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:-50V; Continuous Collector Current Ic:-100mA; Base Input Resistor R1:4.7kohm; Base-Emitter Resistor R2:47kohm; Resistor Ratio, R1 / R2:10(Ratio); RF Transistor Case:SOT-363; No.
  • Eletrônicos
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  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA
    • TVS DIODE, AEC-Q101, UNIDIR, SOD-123W; Product Range:PTVSxS1UTR Series; TVS Polarity:Unidirectional; Reverse Stand-Off Voltage Vrwm:3.3V; Clamping Voltage Vc Max:8V; Diode Case Style:SOD-123W; No.

    TVS DIODE, AEC-Q101, UNIDIR, SOD-123W; Product Range:PTVSxS1UTR Series; TVS Polarity:Unidirectional; Reverse Stand-Off Voltage Vrwm:3.3V; Clamping Voltage Vc Max:8V; Diode Case Style:SOD-123W; No.

    Nexperia Ptvs3V3S1Utr,115 of Pins:2Pins; Breakdown Voltage Min:5.2V; Breakdown Voltage Max:6V; Peak Pulse Power Dissipation:-; Automotive Qualification Standard:AEC-Q101; SVHC:Lead (27-Jun-2018).

  • Eletrônicos
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  • Semicondutores
  • Diodos
  • Circuit Protection
  • NEXPERIA
    • TRANS, AEC-Q101, 10K/10K, SOT-457-6; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:10kohm; Resistor Ratio, R1 / R2:1(Ratio); RF Transistor Case:SOT-457; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA
    • TRANS, AEC-Q101, 4K7/47K, SOT-363-6; Digital Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:-50V; Continuous Collector Current Ic:-100mA; Base Input Resistor R1:4.7kohm; Base-Emitter Resistor R2:47kohm; Resistor Ratio, R1 / R2:10(Ratio); RF Transistor Case:SOT-363; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA
    • MOSFET, AUTO, DUAL N-CH, 60V, SOT-363; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:320mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.1V; Power Dissipation Pd:280mW; Transistor Case Style:SOT-363; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA
    • MOSFET, AUTO, N AND P-CH, 60V, SOT666; Transistor Polarity:N and P Channel; Continuous Drain Current Id:330mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power Dissipation Pd:330mW; Transistor Case Style:SOT-666; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA
    • MOSFET, P-CHANNEL, -20V, -1.2A, SOT-23-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-1.2A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.17ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-700mV; Power Dissipation Pd:335mW; Transistor Case Style:SOT-23; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA
    • SCHOTTKY DIODE, AUTO, 40V, SOT363; Diode Configuration:Quad; Repetitive Reverse Voltage Vrrm Max:40V; Forward Current If(AV):120mA; Forward Voltage VF Max:1V; Forward Surge Current Ifsm Max:200mA; Operating Temperature Max:150°C; Diode Case Style:SOT-363; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA
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