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Nexperia Bss138Bks,115

About The MOSFET, AUTO, DUAL N-CH, 60V, SOT-363; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:320mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

MOSFET, AUTO, DUAL N-CH, 60V, SOT-363; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:320mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.1V; Power Dissipation Pd:280mW; Transistor Case Style:SOT-363; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

Semiconductors - Discretes

Nexperia Bss138Bks,115

Semiconductors - Discretes

Specifications of Nexperia Bss138Bks,115

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Nexperia Bss138Bks,115
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SCHOTTKY RECTIFIER, 1A, 25V, SOT-223; Repetitive Reverse Voltage Vrrm Max:25V; Forward Current If(AV):1A; Diode Configuration:Dual Series; Diode Case Style:SOT-223; No.

SCHOTTKY RECTIFIER, 1A, 25V, SOT-223; Repetitive Reverse Voltage Vrrm Max:25V; Forward Current If(AV):1A; Diode Configuration:Dual Series; Diode Case Style:SOT-223; No.

Nexperia Bat120S,115 of Pins:4Pins; Forward Voltage VF Max:450mV; Forward Surge Current Ifsm Max:10A; Operating Temperature Max:125°C; Product Range:BAT120 Series; Automotive Qualification Standard:-; SVHC:No SVHC (27-Jun-2018); Semiconductor Technology:Si.

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  • NEXPERIA
    • SCHOTTKY DIODE, 70V, 0.07A, SOT-363; Diode Configuration:Quad; Repetitive Reverse Voltage Vrrm Max:70V; Forward Current If(AV):70mA; Forward Voltage VF Max:1V; Forward Surge Current Ifsm Max:100mA; Operating Temperature Max:150°C; Diode Case Style:SOT-363; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
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  • NEXPERIA
    • SCHOTTKY DIODE, 70V, 0.07A, SOT-666; Diode Configuration:Triple Isolated; Repetitive Reverse Voltage Vrrm Max:70V; Forward Current If(AV):70mA; Forward Voltage VF Max:1V; Forward Surge Current Ifsm Max:100mA; Operating Temperature Max:150°C; Diode Case Style:SOT-666; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA
    • SCHOTTKY DIODE, 70V, 0.07A, SOD-882; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:70V; Forward Current If(AV):70mA; Forward Voltage VF Max:1V; Forward Surge Current Ifsm Max:100mA; Operating Temperature Max:150°C; Diode Case Style:SOD-882; No.
  • Eletrônicos
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  • Semicondutores
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  • NEXPERIA
    • SCHOTTKY DIODE, AUTO, 40V, SOT363; Diode Configuration:Quad; Repetitive Reverse Voltage Vrrm Max:40V; Forward Current If(AV):120mA; Forward Voltage VF Max:1V; Forward Surge Current Ifsm Max:200mA; Operating Temperature Max:150°C; Diode Case Style:SOT-363; No.
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  • NEXPERIA
    • MOSFET, P-CHANNEL, -20V, -1.2A, SOT-23-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-1.2A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.17ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-700mV; Power Dissipation Pd:335mW; Transistor Case Style:SOT-23; No.
  • Eletrônicos
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  • Semicondutores
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  • NEXPERIA
    • MOSFET, AUTO, N AND P-CH, 60V, SOT666; Transistor Polarity:N and P Channel; Continuous Drain Current Id:330mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power Dissipation Pd:330mW; Transistor Case Style:SOT-666; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA
    • MOSFET, AUTO, DUAL N-CH, 60V, SOT-363; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:320mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.1V; Power Dissipation Pd:280mW; Transistor Case Style:SOT-363; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA
    • MOSFET, AUTO, N AND P-CH, 60V, SOT666; Transistor Polarity:N and P Channel; Continuous Drain Current Id:330mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power Dissipation Pd:330mW; Transistor Case Style:SOT-666; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA
    • MOSFET, AUTO, DUAL N-CH, 60V, SOT-363; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:320mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.1V; Power Dissipation Pd:280mW; Transistor Case Style:SOT-363; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA