Vishay Sidr680Dp-T1-Ge3

Rating :- 9.95 /10

Votes :- 53

MOSFET, N-CH, 600V, 25A, 150DEG C, 39W; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.127ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:39W; Transistor Case Style:TO-220FP; No.

Vishay Siha25N60Efl-Ge3 of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:E Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

MOSFET, N-CH, 650V, 24A, 150DEG C, 39W; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.13ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:39W; Transistor Case Style:TO-220FP; No.

Vishay Siha24N65Ef-Ge3 of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:E Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

MOSFET, N-CH, 600V, 20A, 150DEG C, 33W; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.156ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:33W; Transistor Case Style:TO-220FP; No.

Vishay Siha22N60Ae-Ge3 of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:E Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

MOSFET, N-CH, 800V, 15A, 150DEG C, 35W; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.25ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:35W; Transistor Case Style:TO-220FP; No.

Vishay Siha17N80E-Ge3 of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:E Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

MOSFET, N-CH, 500V, 14.5A, 150DEG C, 33W; Transistor Polarity:N Channel; Continuous Drain Current Id:14.5A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.243ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:33W; Transistor Case Style:TO-220FP; No.

Vishay Siha15N50E-Ge3 of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:E Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

MOSFET, N-CH, 800V, 12A, 150DEG C, 34W; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.38ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:34W; Transistor Case Style:TO-220FP; No.

Vishay Siha11N80E-Ge3 of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:E Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

MOSFET, N-CH, 80V, 100A, 150DEG C, 125W; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0024ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.4V; Power Dissipation Pd:125W; Transistor Case Style:PowerPAK SO; No.

Vishay Sidr680Dp-T1-Ge3 of Pins:8Pins; Operating Temperature Max:150Â°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

MOSFET, N-CH, 40V, 100A, 150DEG C, 125W; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00073ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.3V; Power Dissipation Pd:125W; Transistor Case Style:PowerPAK SO; No.

Vishay Sidr638Dp-T1-Ge3 of Pins:8Pins; Operating Temperature Max:150Â°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

MOSFET, N-CH, 80V, 100A, 150DEG C, 125W; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0024ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.4V; Power Dissipation Pd:125W; Transistor Case Style:PowerPAK SO; No.

MOSFET, N-CH, 40V, 100A, 150DEG C, 125W; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00073ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.3V; Power Dissipation Pd:125W; Transistor Case Style:PowerPAK SO; No.