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LITTELFUSE

Littelfuse Mcr703At4G

About The 6A; On State RMS Current IT(rms):4A; Thyristor Case Style:TO-252; No.THYRISTOR; Peak Repetitive Off-State Voltage, Vdrm:100V; Gate Trigger Current Max, Igt:25µA; Current It av:2

THYRISTOR; Peak Repetitive Off-State Voltage, Vdrm:100V; Gate Trigger Current Max, Igt:25µA; Current It av:2.6A; On State RMS Current IT(rms):4A; Thyristor Case Style:TO-252; No. of Pins:3Pins; Peak Non Rep Surge Current Itsm 50Hz:25A; Holding Current Max Ih:5mA; Gate Trigger Voltage Max Vgt:800mV; Operating Temperature Max:110°C; Product Range:-; MSL:-; Current Itsm:25A; Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +110°C; Termination Type:Surface Mount Device; Thyristor Case:TO-252; Thyristor Type:Thyristor

Semiconductors - Discretes

Littelfuse Mcr703At4G

Semiconductors - Discretes

Specifications of Littelfuse Mcr703At4G

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Littelfuse Mcr703At4G
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MOSFET, NP; Transistor Polarity:N and P Channel; Continuous Drain Current Id:2.7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.11ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power Dissipation Pd:1.25W; Transistor Case Style:µSOIC; No.

MOSFET, NP; Transistor Polarity:N and P Channel; Continuous Drain Current Id:2.7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.11ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power Dissipation Pd:1.25W; Transistor Case Style:µSOIC; No.

7A; On State Resistance @ Vgs = 10V N Channel:900mohm; On State Resistance @ Vgs = 10V P Channel:170mohm; On State Resistance @ Vgs = 4.5V N Channel:140mohm; On State Resistance @ Vgs = 4.7A; Cont Current Id P Channel:2A; Current Id Max:2.

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  • INFINEON
    • THYRISTOR; Peak Repetitive Off-State Voltage, Vdrm:100V; Gate Trigger Current Max, Igt:25µA; Current It av:2.6A; On State RMS Current IT(rms):4A; Thyristor Case Style:TO-252; No.

    THYRISTOR; Peak Repetitive Off-State Voltage, Vdrm:100V; Gate Trigger Current Max, Igt:25µA; Current It av:2.6A; On State RMS Current IT(rms):4A; Thyristor Case Style:TO-252; No.

    Littelfuse Mcr703At4G of Pins:3Pins; Peak Non Rep Surge Current Itsm 50Hz:25A; Holding Current Max Ih:5mA; Gate Trigger Voltage Max Vgt:800mV; Operating Temperature Max:110°C; Product Range:-; MSL:-; Current Itsm:25A; Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +110°C; Termination Type:Surface Mount Device; Thyristor Case:TO-252; Thyristor Type:Thyristor.

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  • LITTELFUSE
    • HEATSINK, TO-220, 24°C/W; Thermal Resistance:24°C/W; Packages Cooled:TO-220; External Width - Metric:19.05mm; External Height - Metric:9.67mm; External Length - Metric:19.05mm; External Diameter - Metric:-; Heat Sink Material:Aluminium; External Width - Imperial:0.75"; External Height - Imperial:0.38"; External Length - Imperial:0.75"; External Diameter - Imperial:-; Product Range:-; SVHC:No SVHC (15-Jan-2019)
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  • BOYD
    • TRANSISTOR; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:150MHz; Power Dissipation Pd:225mW; DC Collector Current:500mA; DC Current Gain hFE:150hFE; Transistor Case Style:SOT-23; No.

    TRANSISTOR; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:150MHz; Power Dissipation Pd:225mW; DC Collector Current:500mA; DC Current Gain hFE:150hFE; Transistor Case Style:SOT-23; No.

    Onsemi Mmbt8099Lt1G of Pins:3Pins; Operating Temperature Max:150°C; Product Range:MMBTxxxx Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):300mV; Current Ic Continuous a Max:500mA; Gain Bandwidth ft Typ:150MHz; Hfe Min:75; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device.

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  • ONSEMI
    • TRANSISTOR; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:150MHz; Power Dissipation Pd:225mW; DC Collector Current:500mA; DC Current Gain hFE:150hFE; Transistor Case Style:SOT-23; No.

    TRANSISTOR; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:150MHz; Power Dissipation Pd:225mW; DC Collector Current:500mA; DC Current Gain hFE:150hFE; Transistor Case Style:SOT-23; No.

    Onsemi Mmbt8099Lt1G of Pins:3Pins; Operating Temperature Max:150°C; Product Range:MMBTxxxx Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):300mV; Current Ic Continuous a Max:500mA; Gain Bandwidth ft Typ:150MHz; Hfe Min:75; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device.

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