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Boyd 507302B00000G

About The 67mm; External Length - Metric:19.75"; External Height - Imperial:0

HEATSINK, TO-220, 24°C/W; Thermal Resistance:24°C/W; Packages Cooled:TO-220; External Width - Metric:19.05mm; External Height - Metric:9.67mm; External Length - Metric:19.05mm; External Diameter - Metric:-; Heat Sink Material:Aluminium; External Width - Imperial:0.75"; External Height - Imperial:0.38"; External Length - Imperial:0.75"; External Diameter - Imperial:-; Product Range:-; SVHC:No SVHC (15-Jan-2019)

Cooling & Thermal Management

Boyd 507302B00000G

More from Eletrônicos: HEATSINK, TO-220, 24°C/W; Thermal Resistance:24°C/W; Packages Cooled:TO-220; External Width - Metric:19.05mm; External Height - Metric:9.67mm; External Length - Metric:19.05mm; External Diameter - Metric:-; Heat Sink Material:Aluminium; External Width - Imperial:0.75"; External Height - Imperial:0.38"; External Length - Imperial:0.75"; External Diameter - Imperial:-; Product Range:-; SVHC:No SVHC (15-Jan-2019)
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Cooling & Thermal Management

Specifications of Boyd 507302B00000G

CategoryEletrônicos
Instockinstock

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Boyd 507302B00000G
More Varieties

Rating :- 8.15 /10
Votes :- 52
MOSFET, P; Transistor Polarity:P Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0038ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No.

MOSFET, P; Transistor Polarity:P Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0038ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No.

8V; Voltage Vgs Rds on Measurement:10V.Onsemi Fds6681Z of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:-20A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Voltage Vds Typ:30V; Voltage Vgs Max:-1.

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    • MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0236ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:810mV; Power Dissipation Pd:900mW; Transistor Case Style:µFET; No.
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    • HEATSINK, BGA; Thermal Resistance:23.4°C/W; Packages Cooled:BGA; External Width - Metric:23mm; External Height - Metric:18mm; External Length - Metric:23mm; External Diameter - Metric:-; Heat Sink Material:Aluminium; External Width - Imperial:0.9"; External Height - Imperial:0.7"; External Length - Imperial:0.9"; External Diameter - Imperial:-; Product Range:-; SVHC:No SVHC (15-Jan-2019)
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    • MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:110A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.009ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:312W; Transistor Case Style:TO-220; No.

    MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:110A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.009ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:312W; Transistor Case Style:TO-220; No.

    Stmicroelectronics Stp120Nf10 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:STP Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (17-Dec-2015); Current Id Max:110A; On State resistance @ Vgs = 10V:10.5mohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V.

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  • STMICROELECTRONICS
    • MOSFET, NP; Transistor Polarity:N and P Channel; Continuous Drain Current Id:2.7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.11ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power Dissipation Pd:1.25W; Transistor Case Style:µSOIC; No.

    MOSFET, NP; Transistor Polarity:N and P Channel; Continuous Drain Current Id:2.7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.11ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power Dissipation Pd:1.25W; Transistor Case Style:µSOIC; No.

    5V P Channel:300mohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm N Channel:21A; Pulse Current Idm P Channel:16A; Termination Type:Surface Mount Device; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds N Channel:10V; Voltage Vgs Rds P Channel:10V.Infineon Irf7509Trpbf of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 2 - 1 year; SVHC:No SVHC (27-Jun-2018); Cont Current Id N Channel:2.

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  • INFINEON
    • THYRISTOR; Peak Repetitive Off-State Voltage, Vdrm:100V; Gate Trigger Current Max, Igt:25µA; Current It av:2.6A; On State RMS Current IT(rms):4A; Thyristor Case Style:TO-252; No.

    THYRISTOR; Peak Repetitive Off-State Voltage, Vdrm:100V; Gate Trigger Current Max, Igt:25µA; Current It av:2.6A; On State RMS Current IT(rms):4A; Thyristor Case Style:TO-252; No.

    Littelfuse Mcr703At4G of Pins:3Pins; Peak Non Rep Surge Current Itsm 50Hz:25A; Holding Current Max Ih:5mA; Gate Trigger Voltage Max Vgt:800mV; Operating Temperature Max:110°C; Product Range:-; MSL:-; Current Itsm:25A; Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +110°C; Termination Type:Surface Mount Device; Thyristor Case:TO-252; Thyristor Type:Thyristor.

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  • LITTELFUSE
    • HEATSINK, TO-220, 24°C/W; Thermal Resistance:24°C/W; Packages Cooled:TO-220; External Width - Metric:19.05mm; External Height - Metric:9.67mm; External Length - Metric:19.05mm; External Diameter - Metric:-; Heat Sink Material:Aluminium; External Width - Imperial:0.75"; External Height - Imperial:0.38"; External Length - Imperial:0.75"; External Diameter - Imperial:-; Product Range:-; SVHC:No SVHC (15-Jan-2019)
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    • TRANSISTOR; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:150MHz; Power Dissipation Pd:225mW; DC Collector Current:500mA; DC Current Gain hFE:150hFE; Transistor Case Style:SOT-23; No.

    TRANSISTOR; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:150MHz; Power Dissipation Pd:225mW; DC Collector Current:500mA; DC Current Gain hFE:150hFE; Transistor Case Style:SOT-23; No.

    Onsemi Mmbt8099Lt1G of Pins:3Pins; Operating Temperature Max:150°C; Product Range:MMBTxxxx Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):300mV; Current Ic Continuous a Max:500mA; Gain Bandwidth ft Typ:150MHz; Hfe Min:75; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device.

  • Eletrônicos
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  • Semicondutores
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  • ONSEMI
    • HEATSINK, TO-220, 24°C/W; Thermal Resistance:24°C/W; Packages Cooled:TO-220; External Width - Metric:19.05mm; External Height - Metric:9.67mm; External Length - Metric:19.05mm; External Diameter - Metric:-; Heat Sink Material:Aluminium; External Width - Imperial:0.75"; External Height - Imperial:0.38"; External Length - Imperial:0.75"; External Diameter - Imperial:-; Product Range:-; SVHC:No SVHC (15-Jan-2019)
  • Eletrônicos
  • Cooling & Thermal Management
  • BOYD
    • TRANSISTOR; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:150MHz; Power Dissipation Pd:225mW; DC Collector Current:500mA; DC Current Gain hFE:150hFE; Transistor Case Style:SOT-23; No.

    TRANSISTOR; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:150MHz; Power Dissipation Pd:225mW; DC Collector Current:500mA; DC Current Gain hFE:150hFE; Transistor Case Style:SOT-23; No.

    Onsemi Mmbt8099Lt1G of Pins:3Pins; Operating Temperature Max:150°C; Product Range:MMBTxxxx Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):300mV; Current Ic Continuous a Max:500mA; Gain Bandwidth ft Typ:150MHz; Hfe Min:75; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device.

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  • ONSEMI