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Boyd 374024B00035G

About The 4"; External Length - Imperial:0.9"; External Height - Imperial:0

HEATSINK, BGA; Thermal Resistance:40°C/W; Packages Cooled:BGA; External Width - Metric:23mm; External Height - Metric:10mm; External Length - Metric:23mm; External Diameter - Metric:-; Heat Sink Material:Aluminium; External Width - Imperial:0.9"; External Height - Imperial:0.4"; External Length - Imperial:0.9"; External Diameter - Imperial:-; Product Range:-; SVHC:No SVHC (15-Jan-2019)

Cooling & Thermal Management

Boyd 374024B00035G

HEATSINK, TO-220, 24.4C/W; Thermal Resistance:24.4°C/W; Packages Cooled:TO-220; External Width - Metric:13.21mm; External Height - Metric:12.7mm; External Length - Metric:19.05mm; External Diameter - Metric:-; Heat Sink Material:Aluminium; External Width - Imperial:0.52"; External Height - Imperial:0.5"; External Length - Imperial:0.75"; External Diameter - Imperial:-; Product Range:-; SVHC:No SVHC (15-Jan-2019)
HEATSINK; Thermal Resistance:56°C/W; Packages Cooled:TO-220; External Width - Metric:13.2mm; External Height - Metric:9.5mm; External Length - Metric:19.1mm; External Diameter - Metric:-; Heat Sink Material:Aluminium; External Width - Imperial:0.52"; External Height - Imperial:0.375"; External Length - Imperial:0.75"; External Diameter - Imperial:-; Product Range:-; SVHC:No SVHC (15-Jan-2019)
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Cooling & Thermal Management

Specifications of Boyd 374024B00035G

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Boyd 374024B00035G
More Varieties

Rating :- 8.05 /10
Votes :- 51
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:41A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.055ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:230W; Transistor Case Style:TO-247AC; No.

MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:41A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.055ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:230W; Transistor Case Style:TO-247AC; No.

Vishay Irfp150Pbf of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; Current Id Max:41A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V.

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  • VISHAY
    • MOSFET, P; Transistor Polarity:P Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0038ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No.

    MOSFET, P; Transistor Polarity:P Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0038ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No.

    8V; Voltage Vgs Rds on Measurement:10V.Onsemi Fds6681Z of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:-20A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Voltage Vds Typ:30V; Voltage Vgs Max:-1.

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  • ONSEMI
    • MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0236ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:810mV; Power Dissipation Pd:900mW; Transistor Case Style:µFET; No.

    MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0236ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:810mV; Power Dissipation Pd:900mW; Transistor Case Style:µFET; No.

    Onsemi Fdma430Nz of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:5A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Voltage Vds Typ:30V; Voltage Vgs Max:810mV; Voltage Vgs Rds on Measurement:4.5V.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • HEATSINK, TO-263; Thermal Resistance:18°C/W; Packages Cooled:TO-263; External Width - Metric:12.7mm; External Height - Metric:10.16mm; External Length - Metric:26.16mm; External Diameter - Metric:-; Heat Sink Material:Copper; External Width - Imperial:0.5"; External Height - Imperial:0.4"; External Length - Imperial:1.03"; External Diameter - Imperial:-; Product Range:-; SVHC:No SVHC (15-Jan-2019)
  • Eletrônicos
  • Cooling & Thermal Management
  • BOYD
    • HEATSINK, TO-263; Thermal Resistance:18°C/W; Packages Cooled:TO-263; External Width - Metric:12.7mm; External Height - Metric:10.16mm; External Length - Metric:26.16mm; External Diameter - Metric:-; Heat Sink Material:Copper; External Width - Imperial:0.5"; External Height - Imperial:0.4"; External Length - Imperial:1.03"; External Diameter - Imperial:-; Product Range:-; SVHC:No SVHC (15-Jan-2019)
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