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Boyd 573300D00010G

About The 16mm; External Diameter - Metric:-; Heat Sink Material:Copper; External Width - Imperial:0.HEATSINK, TO-263; Thermal Resistance:18°C/W; Packages Cooled:TO-263; External Width - Metric:12

HEATSINK, TO-263; Thermal Resistance:18°C/W; Packages Cooled:TO-263; External Width - Metric:12.7mm; External Height - Metric:10.16mm; External Length - Metric:26.16mm; External Diameter - Metric:-; Heat Sink Material:Copper; External Width - Imperial:0.5"; External Height - Imperial:0.4"; External Length - Imperial:1.03"; External Diameter - Imperial:-; Product Range:-; SVHC:No SVHC (15-Jan-2019)

Cooling & Thermal Management

Boyd 573300D00010G

More from Eletrônicos: HEATSINK, TO-263; Thermal Resistance:18°C/W; Packages Cooled:TO-263; External Width - Metric:12.7mm; External Height - Metric:10.16mm; External Length - Metric:26.16mm; External Diameter - Metric:-; Heat Sink Material:Copper; External Width - Imperial:0.5"; External Height - Imperial:0.4"; External Length - Imperial:1.03"; External Diameter - Imperial:-; Product Range:-; SVHC:No SVHC (15-Jan-2019)
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Cooling & Thermal Management

Specifications of Boyd 573300D00010G

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Boyd 573300D00010G
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Rating :- 9.81 /10
Votes :- 49
Tt Electronics / Optek Technology Opb826Sd

Tt Electronics / Optek Technology Opb826Sd

of Channels:2Channels; No.54mm; Aperture Width:1.02mm; Forward Current If:40mA; Reverse Voltage Vr:2V; Forward Voltage:1.

  • Eletrônicos
  • Sensors & Transducers
  • TT ELECTRONICS / OPTEK TECHNOLOGY
    • IGBT, N; DC Collector Current:43A; Collector Emitter Saturation Voltage Vce(on):2.4V; Power Dissipation Pd:298W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No.

    IGBT, N; DC Collector Current:43A; Collector Emitter Saturation Voltage Vce(on):2.4V; Power Dissipation Pd:298W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No.

    Onsemi Hgtg11N120Cnd of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018); Current Ic Continuous a Max:43A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Max:298W; Termination Type:Surface Mount Device; Transistor Polarity:N Channel; Transistor Type:IGBT; Voltage Vces:1.2kV.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:3.3A; Drain Source Voltage Vds:500V; On Resistance Rds(on):3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Dissipation Pd:83W; Transistor Case Style:TO-252; No.

    MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:3.3A; Drain Source Voltage Vds:500V; On Resistance Rds(on):3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Dissipation Pd:83W; Transistor Case Style:TO-252; No.

    Vishay Irfr420Apbf of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; Current Id Max:3.3A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • VISHAY
    • MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:41A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.055ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:230W; Transistor Case Style:TO-247AC; No.

    MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:41A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.055ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:230W; Transistor Case Style:TO-247AC; No.

    Vishay Irfp150Pbf of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; Current Id Max:41A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • VISHAY
    • MOSFET, P; Transistor Polarity:P Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0038ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No.

    MOSFET, P; Transistor Polarity:P Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0038ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No.

    Onsemi Fds6681Z of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:-20A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Voltage Vds Typ:30V; Voltage Vgs Max:-1.8V; Voltage Vgs Rds on Measurement:10V.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0236ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:810mV; Power Dissipation Pd:900mW; Transistor Case Style:µFET; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • HEATSINK, TO-263; Thermal Resistance:18°C/W; Packages Cooled:TO-263; External Width - Metric:12.7mm; External Height - Metric:10.16mm; External Length - Metric:26.16mm; External Diameter - Metric:-; Heat Sink Material:Copper; External Width - Imperial:0.5"; External Height - Imperial:0.4"; External Length - Imperial:1.03"; External Diameter - Imperial:-; Product Range:-; SVHC:No SVHC (15-Jan-2019)
  • Eletrônicos
  • Cooling & Thermal Management
  • BOYD
    • HEATSINK; Thermal Resistance:56°C/W; Packages Cooled:TO-220; External Width - Metric:13.2mm; External Height - Metric:9.5mm; External Length - Metric:19.1mm; External Diameter - Metric:-; Heat Sink Material:Aluminium; External Width - Imperial:0.52"; External Height - Imperial:0.375"; External Length - Imperial:0.75"; External Diameter - Imperial:-; Product Range:-; SVHC:No SVHC (15-Jan-2019)
  • Eletrônicos
  • Cooling & Thermal Management
  • WAKEFIELD THERMAL
    • HEATSINK, TO-263; Thermal Resistance:18°C/W; Packages Cooled:TO-263; External Width - Metric:12.7mm; External Height - Metric:10.16mm; External Length - Metric:26.16mm; External Diameter - Metric:-; Heat Sink Material:Copper; External Width - Imperial:0.5"; External Height - Imperial:0.4"; External Length - Imperial:1.03"; External Diameter - Imperial:-; Product Range:-; SVHC:No SVHC (15-Jan-2019)
  • Eletrônicos
  • Cooling & Thermal Management
  • BOYD
    • HEATSINK; Thermal Resistance:56°C/W; Packages Cooled:TO-220; External Width - Metric:13.2mm; External Height - Metric:9.5mm; External Length - Metric:19.1mm; External Diameter - Metric:-; Heat Sink Material:Aluminium; External Width - Imperial:0.52"; External Height - Imperial:0.375"; External Length - Imperial:0.75"; External Diameter - Imperial:-; Product Range:-; SVHC:No SVHC (15-Jan-2019)
  • Eletrônicos
  • Cooling & Thermal Management
  • WAKEFIELD THERMAL