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VISHAY

Vishay Si4599Dy-T1-Ge3

About The MOSFET, NP-CH, 40V, SO8; Transistor Polarity:N and P Channel; Continuous Drain Current Id:6.0295ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1

of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; Current Id Max:6.8A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:20V MOSFET, NP-CH, 40V, SO8; Transistor Polarity:N and P Channel; Continuous Drain Current Id:6.8A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0295ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.4V; Power Dissipation Pd:3W; Transistor Case Style:SOIC; No.

Semiconductors - Discretes

Vishay Si4599Dy-T1-Ge3

Semiconductors - Discretes

Specifications of Vishay Si4599Dy-T1-Ge3

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Vishay Si4599Dy-T1-Ge3
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