reorder
ALWAYS Be Happy search home
c
Combo Blog
Categories
Play Games New
Eletrônicos
Componentes e placas de circuitos
Semicondutores
Semiconductors - Discretes
INFINEON

Infineon Bfr92Pe6327Htsa1

About The 5GHz; Gain Bandwidth ft Typ:5GHz; Hfe Min:40; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:-; SVHC:No SVHC (27-Jun-2018); Associated Gain Ga:16dB; Av Current Ic:45mA; Continuous Collector Current Ic:45mA; Continuous Collector Current Ic Max:30mA; Current Ic Continuous a Max:30mA; Current Ic hFE:14mA; Gain Bandwidth ft Min:3

RF TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:15V; Transition Frequency ft:5GHz; Power Dissipation Pd:280mW; DC Collector Current:45mA; DC Current Gain hFE:100hFE; RF Transistor Case:SOT-23; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:-; SVHC:No SVHC (27-Jun-2018); Associated Gain Ga:16dB; Av Current Ic:45mA; Continuous Collector Current Ic:45mA; Continuous Collector Current Ic Max:30mA; Current Ic Continuous a Max:30mA; Current Ic hFE:14mA; Gain Bandwidth ft Min:3.5GHz; Gain Bandwidth ft Typ:5GHz; Hfe Min:40; No. of Transistors:1; Noise Figure Typ:1.4dB; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:280mW; SMD Marking:GF; Termination Type:Surface Mount Device; Test Frequency:900MHz; Transistor Case Style:SOT-23; Voltage Vcbo:20V

Semiconductors - Discretes

Infineon Bfr92Pe6327Htsa1

of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):650mV; Continuous Collector Current Ic Max:100mA; Current Ic @ Vce Sat:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:2mA; External Depth:2.6mm; External Length / Height:1mm; External Width:2.9mm; Gain Bandwidth ft Typ:250MHz; Hfe Min:125; Module Configuration:Dual; No.
of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Continuous Collector Current Ic:25mA; Continuous Collector Current Ic Max:50mA; Current Ic Continuous a Max:50mA; Current Ic hFE:25mA; Forward Current Transfer Ratio:1:10; Gain Bandwidth ft Min:1GHz; Gain Bandwidth ft Typ:2.5GHz; Hfe Min:20; No.
More from Semicondutores: Of Transistors:1; Noise Figure Typ:1.4dB; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C To +150°C; Power Dissipation Ptot Max:280mW; SMD Marking:GF; Termination Type:Surface Mount Device; Test Frequency:900MHz; Transistor Case Style:SOT-23; Voltage Vcbo:20V
Search

Semiconductors - Discretes

Specifications of Infineon Bfr92Pe6327Htsa1

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
Instockinstock

Last Updated

Infineon Bfr92Pe6327Htsa1
More Varieties
Eletrônicos
Componentes e placas de circuitos

Rating :- 9.92 /10
Votes :- 50
of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:-; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):400mV; Continuous Collector Current Ic Max:600mA; Current Gain Hfe Max:300; Current Ic @ Vce Sat:150mA; Current Ic Continuous a Max:600mA; Current Ic hFE:150mA; Gain Bandwidth ft Min:200MHz; Gain Bandwidth ft Typ:200MHz; Hfe Min:100; No.

of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:-; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):400mV; Continuous Collector Current Ic Max:600mA; Current Gain Hfe Max:300; Current Ic @ Vce Sat:150mA; Current Ic Continuous a Max:600mA; Current Ic hFE:150mA; Gain Bandwidth ft Min:200MHz; Gain Bandwidth ft Typ:200MHz; Hfe Min:100; No.

Infineon Smbt2907Ae6327Htsa1.of Transistors:1; Power Dissipation Ptot Max:330mW; Pulsed Current Icm:600mA; SMD Marking:2F; Termination Type:Surface Mount Device; Voltage Vcbo:60V TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:200MHz; Power Dissipation Pd:330mW; DC Collector Current:600mA; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-23; No.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:20.7A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:-; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):300mV; Continuous Collector Current Ic Max:600mA; Current Gain Hfe Max:300; Current Ic @ Vce Sat:500mA; Current Ic Continuous a Max:600mA; Current Ic hFE:150mA; Device Marking:SMBT2222A; Gain Bandwidth ft Min:300MHz; Gain Bandwidth ft Typ:270MHz; Hfe Min:100; No.

    of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:-; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):300mV; Continuous Collector Current Ic Max:600mA; Current Gain Hfe Max:300; Current Ic @ Vce Sat:500mA; Current Ic Continuous a Max:600mA; Current Ic hFE:150mA; Device Marking:SMBT2222A; Gain Bandwidth ft Min:300MHz; Gain Bandwidth ft Typ:270MHz; Hfe Min:100; No.

    Infineon Smbt2222Ae6327Htsa1.of Transistors:1; Noise Factor Typ:4dB; Power Dissipation Ptot Max:330mW; Pulsed Current Icm:600mA; SMD Marking:1P; Termination Type:Surface Mount Device; Voltage Vcbo:75V TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation Pd:330mW; DC Collector Current:600mA; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-23; No.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:-; SVHC:No SVHC (27-Jun-2018); Avalanche Single Pulse Energy Eas:2.6mJ; Capacitance Ciss Typ:19pF; Current Idss Max:1µA; Current Temperature:25°C; Device Marking:YBs; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Fall Time tf:34ns; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:-; SVHC:No SVHC (27-Jun-2018); Avalanche Single Pulse Energy Eas:2.6mJ; Capacitance Ciss Typ:19pF; Current Idss Max:1µA; Current Temperature:25°C; Device Marking:YBs; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Fall Time tf:34ns; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON