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INFINEON

Infineon Smbt2907Ae6327Htsa1

About The of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:-; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):400mV; Continuous Collector Current Ic Max:600mA; Current Gain Hfe Max:300; Current Ic @ Vce Sat:150mA; Current Ic Continuous a Max:600mA; Current Ic hFE:150mA; Gain Bandwidth ft Min:200MHz; Gain Bandwidth ft Typ:200MHz; Hfe Min:100; No. of Transistors:1; Power Dissipation Ptot Max:330mW; Pulsed Current Icm:600mA; SMD Marking:2F; Termination Type:Surface Mount Device; Voltage Vcbo:60V

TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:200MHz; Power Dissipation Pd:330mW; DC Collector Current:600mA; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-23; No. of Transistors:1; Power Dissipation Ptot Max:330mW; Pulsed Current Icm:600mA; SMD Marking:2F; Termination Type:Surface Mount Device; Voltage Vcbo:60V of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:-; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):400mV; Continuous Collector Current Ic Max:600mA; Current Gain Hfe Max:300; Current Ic @ Vce Sat:150mA; Current Ic Continuous a Max:600mA; Current Ic hFE:150mA; Gain Bandwidth ft Min:200MHz; Gain Bandwidth ft Typ:200MHz; Hfe Min:100; No.

Semiconductors - Discretes

Infineon Smbt2907Ae6327Htsa1

of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:20.7A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No.
of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:-; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):300mV; Continuous Collector Current Ic Max:200mA; Current Gain Hfe Max:300; Current Ic @ Vce Sat:50mA; Current Ic Continuous a Max:200mA; Current Ic hFE:10mA; Device Marking:SMBT3904; Gain Bandwidth ft Min:300MHz; Gain Bandwidth ft Typ:270MHz; Hfe Min:100; No.
More from Of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:-; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):400mV; Continuous Collector Current Ic Max:600mA; Current Gain Hfe Max:300; Current Ic @ Vce Sat:150mA; Current Ic Continuous A Max:600mA; Current Ic HFE:150mA; Gain Bandwidth Ft Min:200MHz; Gain Bandwidth Ft Typ:200MHz; Hfe Min:100; No. | INFINEON
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Semiconductors - Discretes

Specifications of Infineon Smbt2907Ae6327Htsa1

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Infineon Smbt2907Ae6327Htsa1
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Rating :- 9.89 /10
Votes :- 52
of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:-; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):300mV; Continuous Collector Current Ic Max:200mA; Current Gain Hfe Max:300; Current Ic @ Vce Sat:50mA; Current Ic Continuous a Max:200mA; Current Ic hFE:10mA; Device Marking:SMBT3904; Gain Bandwidth ft Min:300MHz; Gain Bandwidth ft Typ:270MHz; Hfe Min:100; No.

of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:-; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):300mV; Continuous Collector Current Ic Max:200mA; Current Gain Hfe Max:300; Current Ic @ Vce Sat:50mA; Current Ic Continuous a Max:200mA; Current Ic hFE:10mA; Device Marking:SMBT3904; Gain Bandwidth ft Min:300MHz; Gain Bandwidth ft Typ:270MHz; Hfe Min:100; No.

Infineon Smbt3904E6327Htsa1.of Transistors:1; Noise Factor Typ:5dB; Power Dissipation Ptot Max:330mW; Pulsed Current Icm:200mA; SMD Marking:1A; Termination Type:Surface Mount Device; Voltage Vcbo:60V TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:270MHz; Power Dissipation Pd:330mW; DC Collector Current:200mA; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-23; No.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:-; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):400mV; Continuous Collector Current Ic Max:600mA; Current Gain Hfe Max:300; Current Ic @ Vce Sat:150mA; Current Ic Continuous a Max:600mA; Current Ic hFE:150mA; Gain Bandwidth ft Min:200MHz; Gain Bandwidth ft Typ:200MHz; Hfe Min:100; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:-; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):300mV; Continuous Collector Current Ic Max:600mA; Current Gain Hfe Max:300; Current Ic @ Vce Sat:500mA; Current Ic Continuous a Max:600mA; Current Ic hFE:150mA; Device Marking:SMBT2222A; Gain Bandwidth ft Min:300MHz; Gain Bandwidth ft Typ:270MHz; Hfe Min:100; No.

    of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:-; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):300mV; Continuous Collector Current Ic Max:600mA; Current Gain Hfe Max:300; Current Ic @ Vce Sat:500mA; Current Ic Continuous a Max:600mA; Current Ic hFE:150mA; Device Marking:SMBT2222A; Gain Bandwidth ft Min:300MHz; Gain Bandwidth ft Typ:270MHz; Hfe Min:100; No.

    of Transistors:1; Noise Factor Typ:4dB; Power Dissipation Ptot Max:330mW; Pulsed Current Icm:600mA; SMD Marking:1P; Termination Type:Surface Mount Device; Voltage Vcbo:75V TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation Pd:330mW; DC Collector Current:600mA; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-23; No. Infineon Smbt2222Ae6327Htsa1.

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  • INFINEON
    • of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:-; SVHC:No SVHC (27-Jun-2018); Avalanche Single Pulse Energy Eas:2.6mJ; Capacitance Ciss Typ:19pF; Current Idss Max:1µA; Current Temperature:25°C; Device Marking:YBs; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Fall Time tf:34ns; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No.

    of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:-; SVHC:No SVHC (27-Jun-2018); Avalanche Single Pulse Energy Eas:2.6mJ; Capacitance Ciss Typ:19pF; Current Idss Max:1µA; Current Temperature:25°C; Device Marking:YBs; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Fall Time tf:34ns; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No.

    5V; Power Dissipation Pd:360mW; Transistor Case Style:SOT-23; No.036mJ MOSFET, P, -60V, -0.17A, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-170mA; Drain Source Voltage Vds:-60V; On Resistance Rds(on):8ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.5V:12ohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:680mA; Rate of Voltage Change dv / dt:6kV/µs; Repetitive Avalanche Energy Max:0.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
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  • INFINEON
    • of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Continuous Collector Current Ic:25mA; Continuous Collector Current Ic Max:50mA; Current Ic Continuous a Max:50mA; Current Ic hFE:25mA; Forward Current Transfer Ratio:1:10; Gain Bandwidth ft Min:1GHz; Gain Bandwidth ft Typ:2.5GHz; Hfe Min:20; No.

    of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Continuous Collector Current Ic:25mA; Continuous Collector Current Ic Max:50mA; Current Ic Continuous a Max:50mA; Current Ic hFE:25mA; Forward Current Transfer Ratio:1:10; Gain Bandwidth ft Min:1GHz; Gain Bandwidth ft Typ:2.5GHz; Hfe Min:20; No.

    Infineon Bfs17Pe6327Htsa1.5GHz; Power Dissipation Pd:280mW; DC Collector Current:25mA; DC Current Gain hFE:70hFE; RF Transistor Case:SOT-23; No.5dB; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Output @ Third Order Intercept Point IP3:21.5dB; Power @ 1dB Gain Compression, P1dB:10dBm; Power Dissipation Ptot Max:280mW; SMD Marking:MC; Termination Type:Surface Mount Device; Test Frequency:800MHz; Transistor Case Style:SOT-23 RF TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:15V; Transition Frequency ft:2.

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  • INFINEON
    • of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:-; SVHC:No SVHC (27-Jun-2018); Associated Gain Ga:16dB; Av Current Ic:45mA; Continuous Collector Current Ic:45mA; Continuous Collector Current Ic Max:30mA; Current Ic Continuous a Max:30mA; Current Ic hFE:14mA; Gain Bandwidth ft Min:3.5GHz; Gain Bandwidth ft Typ:5GHz; Hfe Min:40; No.

    of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:-; SVHC:No SVHC (27-Jun-2018); Associated Gain Ga:16dB; Av Current Ic:45mA; Continuous Collector Current Ic:45mA; Continuous Collector Current Ic Max:30mA; Current Ic Continuous a Max:30mA; Current Ic hFE:14mA; Gain Bandwidth ft Min:3.5GHz; Gain Bandwidth ft Typ:5GHz; Hfe Min:40; No.

    4dB; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:280mW; SMD Marking:GF; Termination Type:Surface Mount Device; Test Frequency:900MHz; Transistor Case Style:SOT-23; Voltage Vcbo:20V RF TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:15V; Transition Frequency ft:5GHz; Power Dissipation Pd:280mW; DC Collector Current:45mA; DC Current Gain hFE:100hFE; RF Transistor Case:SOT-23; No.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
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  • INFINEON
    • of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:-; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):300mV; Continuous Collector Current Ic Max:200mA; Current Gain Hfe Max:300; Current Ic @ Vce Sat:50mA; Current Ic Continuous a Max:200mA; Current Ic hFE:10mA; Device Marking:SMBT3904; Gain Bandwidth ft Min:300MHz; Gain Bandwidth ft Typ:270MHz; Hfe Min:100; No.

    of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:-; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):300mV; Continuous Collector Current Ic Max:200mA; Current Gain Hfe Max:300; Current Ic @ Vce Sat:50mA; Current Ic Continuous a Max:200mA; Current Ic hFE:10mA; Device Marking:SMBT3904; Gain Bandwidth ft Min:300MHz; Gain Bandwidth ft Typ:270MHz; Hfe Min:100; No.

    of Transistors:1; Noise Factor Typ:5dB; Power Dissipation Ptot Max:330mW; Pulsed Current Icm:200mA; SMD Marking:1A; Termination Type:Surface Mount Device; Voltage Vcbo:60V TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:270MHz; Power Dissipation Pd:330mW; DC Collector Current:200mA; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-23; No. Infineon Smbt3904E6327Htsa1.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:-; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):400mV; Continuous Collector Current Ic Max:600mA; Current Gain Hfe Max:300; Current Ic @ Vce Sat:150mA; Current Ic Continuous a Max:600mA; Current Ic hFE:150mA; Gain Bandwidth ft Min:200MHz; Gain Bandwidth ft Typ:200MHz; Hfe Min:100; No.

    of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:-; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):400mV; Continuous Collector Current Ic Max:600mA; Current Gain Hfe Max:300; Current Ic @ Vce Sat:150mA; Current Ic Continuous a Max:600mA; Current Ic hFE:150mA; Gain Bandwidth ft Min:200MHz; Gain Bandwidth ft Typ:200MHz; Hfe Min:100; No.

    of Transistors:1; Power Dissipation Ptot Max:330mW; Pulsed Current Icm:600mA; SMD Marking:2F; Termination Type:Surface Mount Device; Voltage Vcbo:60V TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:200MHz; Power Dissipation Pd:330mW; DC Collector Current:600mA; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-23; No.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:-; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):300mV; Continuous Collector Current Ic Max:200mA; Current Gain Hfe Max:300; Current Ic @ Vce Sat:50mA; Current Ic Continuous a Max:200mA; Current Ic hFE:10mA; Device Marking:SMBT3904; Gain Bandwidth ft Min:300MHz; Gain Bandwidth ft Typ:270MHz; Hfe Min:100; No.

    of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:-; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):300mV; Continuous Collector Current Ic Max:200mA; Current Gain Hfe Max:300; Current Ic @ Vce Sat:50mA; Current Ic Continuous a Max:200mA; Current Ic hFE:10mA; Device Marking:SMBT3904; Gain Bandwidth ft Min:300MHz; Gain Bandwidth ft Typ:270MHz; Hfe Min:100; No.

    of Transistors:1; Noise Factor Typ:5dB; Power Dissipation Ptot Max:330mW; Pulsed Current Icm:200mA; SMD Marking:1A; Termination Type:Surface Mount Device; Voltage Vcbo:60V TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:270MHz; Power Dissipation Pd:330mW; DC Collector Current:200mA; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-23; No.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:-; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):400mV; Continuous Collector Current Ic Max:600mA; Current Gain Hfe Max:300; Current Ic @ Vce Sat:150mA; Current Ic Continuous a Max:600mA; Current Ic hFE:150mA; Gain Bandwidth ft Min:200MHz; Gain Bandwidth ft Typ:200MHz; Hfe Min:100; No.

    of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:-; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):400mV; Continuous Collector Current Ic Max:600mA; Current Gain Hfe Max:300; Current Ic @ Vce Sat:150mA; Current Ic Continuous a Max:600mA; Current Ic hFE:150mA; Gain Bandwidth ft Min:200MHz; Gain Bandwidth ft Typ:200MHz; Hfe Min:100; No.

    of Transistors:1; Power Dissipation Ptot Max:330mW; Pulsed Current Icm:600mA; SMD Marking:2F; Termination Type:Surface Mount Device; Voltage Vcbo:60V TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:200MHz; Power Dissipation Pd:330mW; DC Collector Current:600mA; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-23; No. Infineon Smbt2907Ae6327Htsa1.

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  • INFINEON