Infineon Smbt2222Ae6327Htsa1

Rating :- 8 /10

Votes :- 55

of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:-; SVHC:No SVHC (27-Jun-2018); Avalanche Single Pulse Energy Eas:2.6mJ; Capacitance Ciss Typ:19pF; Current Idss Max:1ÂµA; Current Temperature:25Â°C; Device Marking:YBs; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Fall Time tf:34ns; Full Power Rating Temperature:25Â°C; Junction Temperature Tj Max:150Â°C; Junction Temperature Tj Min:-55Â°C; No.

17A, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-170mA; Drain Source Voltage Vds:-60V; On Resistance Rds(on):8ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.5V:12ohm; Operating Temperature Min:-55Â°C; Operating Temperature Range:-55Â°C to +150Â°C; Pulse Current Idm:680mA; Rate of Voltage Change dv / dt:6kV/Âµs; Repetitive Avalanche Energy Max:0.of Transistors:1; On State Resistance @ Vgs = 4.

of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Continuous Collector Current Ic:25mA; Continuous Collector Current Ic Max:50mA; Current Ic Continuous a Max:50mA; Current Ic hFE:25mA; Forward Current Transfer Ratio:1:10; Gain Bandwidth ft Min:1GHz; Gain Bandwidth ft Typ:2.5GHz; Hfe Min:20; No.

Infineon Bfs17Pe6327Htsa1.of Transistors:1; Noise Figure Typ:3.

of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:-; SVHC:No SVHC (27-Jun-2018); Associated Gain Ga:16dB; Av Current Ic:45mA; Continuous Collector Current Ic:45mA; Continuous Collector Current Ic Max:30mA; Current Ic Continuous a Max:30mA; Current Ic hFE:14mA; Gain Bandwidth ft Min:3.5GHz; Gain Bandwidth ft Typ:5GHz; Hfe Min:40; No.

of Transistors:1; Noise Figure Typ:1. Infineon Bfr92Pe6327Htsa1.4dB; Operating Temperature Min:-65Â°C; Operating Temperature Range:-65Â°C to +150Â°C; Power Dissipation Ptot Max:280mW; SMD Marking:GF; Termination Type:Surface Mount Device; Test Frequency:900MHz; Transistor Case Style:SOT-23; Voltage Vcbo:20V RF TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:15V; Transition Frequency ft:5GHz; Power Dissipation Pd:280mW; DC Collector Current:45mA; DC Current Gain hFE:100hFE; RF Transistor Case:SOT-23; No.

of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:-; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):300mV; Continuous Collector Current Ic Max:200mA; Current Gain Hfe Max:300; Current Ic @ Vce Sat:50mA; Current Ic Continuous a Max:200mA; Current Ic hFE:10mA; Device Marking:SMBT3904; Gain Bandwidth ft Min:300MHz; Gain Bandwidth ft Typ:270MHz; Hfe Min:100; No.

Infineon Smbt3904E6327Htsa1.

of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:-; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):400mV; Continuous Collector Current Ic Max:600mA; Current Gain Hfe Max:300; Current Ic @ Vce Sat:150mA; Current Ic Continuous a Max:600mA; Current Ic hFE:150mA; Gain Bandwidth ft Min:200MHz; Gain Bandwidth ft Typ:200MHz; Hfe Min:100; No.

Infineon Smbt2907Ae6327Htsa1.of Transistors:1; Power Dissipation Ptot Max:330mW; Pulsed Current Icm:600mA; SMD Marking:2F; Termination Type:Surface Mount Device; Voltage Vcbo:60V TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:200MHz; Power Dissipation Pd:330mW; DC Collector Current:600mA; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-23; No.

of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:20.7A; Current Temperature:25Â°C; Full Power Rating Temperature:25Â°C; Junction Temperature Tj Max:150Â°C; Junction Temperature Tj Min:-55Â°C; No.

7A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.1A; SMD Marking:20N60C3; Termination Type:Surface Mount Device; Voltage Vds Typ:650V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3.

of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:-; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):300mV; Continuous Collector Current Ic Max:600mA; Current Gain Hfe Max:300; Current Ic @ Vce Sat:500mA; Current Ic Continuous a Max:600mA; Current Ic hFE:150mA; Device Marking:SMBT2222A; Gain Bandwidth ft Min:300MHz; Gain Bandwidth ft Typ:270MHz; Hfe Min:100; No.

of Transistors:1; Noise Factor Typ:4dB; Power Dissipation Ptot Max:330mW; Pulsed Current Icm:600mA; SMD Marking:1P; Termination Type:Surface Mount Device; Voltage Vcbo:75V TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation Pd:330mW; DC Collector Current:600mA; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-23; No. Infineon Smbt2222Ae6327Htsa1.

of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:-; SVHC:No SVHC (27-Jun-2018); Avalanche Single Pulse Energy Eas:2.6mJ; Capacitance Ciss Typ:19pF; Current Idss Max:1ÂµA; Current Temperature:25Â°C; Device Marking:YBs; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Fall Time tf:34ns; Full Power Rating Temperature:25Â°C; Junction Temperature Tj Max:150Â°C; Junction Temperature Tj Min:-55Â°C; No.

Infineon Bss84Ph6327Xtsa2.036mJ MOSFET, P, -60V, -0.17A, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-170mA; Drain Source Voltage Vds:-60V; On Resistance Rds(on):8ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.

of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:-; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):300mV; Continuous Collector Current Ic Max:600mA; Current Gain Hfe Max:300; Current Ic @ Vce Sat:500mA; Current Ic Continuous a Max:600mA; Current Ic hFE:150mA; Device Marking:SMBT2222A; Gain Bandwidth ft Min:300MHz; Gain Bandwidth ft Typ:270MHz; Hfe Min:100; No.

of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:-; SVHC:No SVHC (27-Jun-2018); Avalanche Single Pulse Energy Eas:2.6mJ; Capacitance Ciss Typ:19pF; Current Idss Max:1ÂµA; Current Temperature:25Â°C; Device Marking:YBs; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Fall Time tf:34ns; Full Power Rating Temperature:25Â°C; Junction Temperature Tj Max:150Â°C; Junction Temperature Tj Min:-55Â°C; No.

5V:12ohm; Operating Temperature Min:-55Â°C; Operating Temperature Range:-55Â°C to +150Â°C; Pulse Current Idm:680mA; Rate of Voltage Change dv / dt:6kV/Âµs; Repetitive Avalanche Energy Max:0.036mJ MOSFET, P, -60V, -0.5V; Power Dissipation Pd:360mW; Transistor Case Style:SOT-23; No. Infineon Bss84Ph6327Xtsa2.