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IXYS SEMICONDUCTOR

Ixys Semiconductor Ixfh16N80P

About The MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.27°C/W; N-channel Gate Charge:70nC; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Reverse Recovery Time trr Max:250ns; Termination Type:Through Hole; Voltage Vds Typ:800V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V

MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:460W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Capacitance Ciss Typ:4000pF; Current Id Max:16A; Junction to Case Thermal Resistance A:0.27°C/W; N-channel Gate Charge:70nC; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Reverse Recovery Time trr Max:250ns; Termination Type:Through Hole; Voltage Vds Typ:800V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V

Semiconductors - Discretes

Ixys Semiconductor Ixfh16N80P

Semiconductors - Discretes

Specifications of Ixys Semiconductor Ixfh16N80P

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Ixys Semiconductor Ixfh16N80P
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Rating :- 9.71 /10
Votes :- 52
MOSFET, N, SOT-227B; Transistor Polarity:N Channel; Continuous Drain Current Id:140A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:680W; Transistor Case Style:ISOTOP; No.

MOSFET, N, SOT-227B; Transistor Polarity:N Channel; Continuous Drain Current Id:140A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:680W; Transistor Case Style:ISOTOP; No.

22°C/W; N-channel Gate Charge:240nC; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Reverse Recovery Time trr Max:200ns; Termination Type:Screw; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V.Ixys Semiconductor Ixfn140N20P of Pins:4Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Capacitance Ciss Typ:7500pF; Current Id Max:115A; Junction to Case Thermal Resistance A:0.

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  • IXYS SEMICONDUCTOR
    • MOSFET, N, SOT-227B; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.049ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:1.04kW; Transistor Case Style:ISOTOP; No.

    MOSFET, N, SOT-227B; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.049ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:1.04kW; Transistor Case Style:ISOTOP; No.

    12°C/W; N-channel Gate Charge:240nC; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Reverse Recovery Time trr Max:200ns; Termination Type:Screw; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V.

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  • IXYS SEMICONDUCTOR
    • MOSFET, N, TO-264; Transistor Polarity:N Channel; Continuous Drain Current Id:64A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.085ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.5V; Power Dissipation Pd:830W; Transistor Case Style:TO-264; No.

    MOSFET, N, TO-264; Transistor Polarity:N Channel; Continuous Drain Current Id:64A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.085ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.5V; Power Dissipation Pd:830W; Transistor Case Style:TO-264; No.

    Ixys Semiconductor Ixfk64N50P of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Capacitance Ciss Typ:8700pF; Current Id Max:64A; Junction to Case Thermal Resistance A:0.15°C/W; N-channel Gate Charge:150nC; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Reverse Recovery Time trr Max:200ns; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V.

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  • IXYS SEMICONDUCTOR
    • MOSFET, N, TO-264; Transistor Polarity:N Channel; Continuous Drain Current Id:48A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.135ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:830W; Transistor Case Style:TO-264; No.

    MOSFET, N, TO-264; Transistor Polarity:N Channel; Continuous Drain Current Id:48A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.135ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:830W; Transistor Case Style:TO-264; No.

    Ixys Semiconductor Ixfk48N60P of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Capacitance Ciss Typ:8860pF; Current Id Max:48A; Junction to Case Thermal Resistance A:0.15°C/W; N-channel Gate Charge:150nC; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Reverse Recovery Time trr Max:200ns; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V.

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  • IXYS SEMICONDUCTOR
    • MOSFET, N, TO-264; Transistor Polarity:N Channel; Continuous Drain Current Id:140A; Drain Source Voltage Vds:300V; On Resistance Rds(on):0.024ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:1.04kW; Transistor Case Style:TO-264; No.

    MOSFET, N, TO-264; Transistor Polarity:N Channel; Continuous Drain Current Id:140A; Drain Source Voltage Vds:300V; On Resistance Rds(on):0.024ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:1.04kW; Transistor Case Style:TO-264; No.

    Ixys Semiconductor Ixfk140N30P of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Capacitance Ciss Typ:14000pF; Current Id Max:140A; Junction to Case Thermal Resistance A:0.

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  • IXYS SEMICONDUCTOR
    • MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:460W; Transistor Case Style:TO-247; No.

    MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:460W; Transistor Case Style:TO-247; No.

    Ixys Semiconductor Ixfh30N50P of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Capacitance Ciss Typ:4150pF; Current Id Max:30A; Junction to Case Thermal Resistance A:0.27°C/W; N-channel Gate Charge:70nC; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Reverse Recovery Time trr Max:200ns; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V.

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  • IXYS SEMICONDUCTOR
    • MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:170A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.009ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:5V; Power Dissipation Pd:714W; Transistor Case Style:TO-247; No.

    MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:170A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.009ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:5V; Power Dissipation Pd:714W; Transistor Case Style:TO-247; No.

    21°C/W; N-channel Gate Charge:198nC; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Reverse Recovery Time trr Max:150ns; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V.Ixys Semiconductor Ixfh170N10P of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Capacitance Ciss Typ:6000pF; Current Id Max:170A; Junction to Case Thermal Resistance A:0.

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  • IXYS SEMICONDUCTOR
    • MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:460W; Transistor Case Style:TO-247; No.

    MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:460W; Transistor Case Style:TO-247; No.

    Ixys Semiconductor Ixfh16N80P of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Capacitance Ciss Typ:4000pF; Current Id Max:16A; Junction to Case Thermal Resistance A:0.

  • Eletrônicos
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  • IXYS SEMICONDUCTOR
    • MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:170A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.009ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:5V; Power Dissipation Pd:714W; Transistor Case Style:TO-247; No.

    MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:170A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.009ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:5V; Power Dissipation Pd:714W; Transistor Case Style:TO-247; No.

    Ixys Semiconductor Ixfh170N10P of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Capacitance Ciss Typ:6000pF; Current Id Max:170A; Junction to Case Thermal Resistance A:0.21°C/W; N-channel Gate Charge:198nC; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Reverse Recovery Time trr Max:150ns; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V.

  • Eletrônicos
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  • IXYS SEMICONDUCTOR
    • MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:460W; Transistor Case Style:TO-247; No.

    MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:460W; Transistor Case Style:TO-247; No.

    27°C/W; N-channel Gate Charge:70nC; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Reverse Recovery Time trr Max:250ns; Termination Type:Through Hole; Voltage Vds Typ:800V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V.Ixys Semiconductor Ixfh16N80P of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Capacitance Ciss Typ:4000pF; Current Id Max:16A; Junction to Case Thermal Resistance A:0.

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  • IXYS SEMICONDUCTOR