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VISHAY

Vishay Sihg47N60Aef-Ge3

About The MOSFET, N-CH, 600V, 40A, 150DEG C, 313W; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.061ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:313W; Transistor Case Style:TO-247AC; No

MOSFET, N-CH, 600V, 40A, 150DEG C, 313W; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.061ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:313W; Transistor Case Style:TO-247AC; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:EF Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

Semiconductors - Discretes

Vishay Sihg47N60Aef-Ge3

Semiconductors - Discretes

Specifications of Vishay Sihg47N60Aef-Ge3

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Vishay Sihg47N60Aef-Ge3
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Rating :- 9.95 /10
Votes :- 49
MOSFET, P-CH, -30V, -60A, 150DEG C; Transistor Polarity:P Channel; Continuous Drain Current Id:-60A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0046ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; Power Dissipation Pd:65.8W; Transistor Case Style:PowerPAK SO; No.

MOSFET, P-CH, -30V, -60A, 150DEG C; Transistor Polarity:P Channel; Continuous Drain Current Id:-60A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0046ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; Power Dissipation Pd:65.8W; Transistor Case Style:PowerPAK SO; No.

Vishay Sir167Dp-T1-Ge3 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen III Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • VISHAY
    • MOSFET, P-CH, -30V, -60A, 150DEG C; Transistor Polarity:P Channel; Continuous Drain Current Id:-60A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0038ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.3V; Power Dissipation Pd:65.8W; Transistor Case Style:PowerPAK SO; No.

    MOSFET, P-CH, -30V, -60A, 150DEG C; Transistor Polarity:P Channel; Continuous Drain Current Id:-60A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0038ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.3V; Power Dissipation Pd:65.8W; Transistor Case Style:PowerPAK SO; No.

    Vishay Sir165Dp-T1-Ge3 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen III Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • VISHAY
    • MOSFET, N-CH, 30V, 40A, 150DEG C, 62.5W; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.1V; Power Dissipation Pd:62.5W; Transistor Case Style:PowerPAK SO; No.

    MOSFET, N-CH, 30V, 40A, 150DEG C, 62.5W; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.1V; Power Dissipation Pd:62.5W; Transistor Case Style:PowerPAK SO; No.

    Vishay Sir164Adp-T1-Ge3 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • VISHAY
    • MOSFET, P-CH, -30V, -60A, 150DEG C; Transistor Polarity:P Channel; Continuous Drain Current Id:-60A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0046ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; Power Dissipation Pd:65.8W; Transistor Case Style:PowerPAK SO; No.

    MOSFET, P-CH, -30V, -60A, 150DEG C; Transistor Polarity:P Channel; Continuous Drain Current Id:-60A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0046ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; Power Dissipation Pd:65.8W; Transistor Case Style:PowerPAK SO; No.

    Vishay Sir167Dp-T1-Ge3 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen III Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • VISHAY
    • MOSFET, P-CH, -30V, -60A, 150DEG C; Transistor Polarity:P Channel; Continuous Drain Current Id:-60A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0038ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.3V; Power Dissipation Pd:65.8W; Transistor Case Style:PowerPAK SO; No.

    MOSFET, P-CH, -30V, -60A, 150DEG C; Transistor Polarity:P Channel; Continuous Drain Current Id:-60A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0038ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.3V; Power Dissipation Pd:65.8W; Transistor Case Style:PowerPAK SO; No.

    Vishay Sir165Dp-T1-Ge3 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen III Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • VISHAY
    • MOSFET, N-CH, 30V, 40A, 150DEG C, 62.5W; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.1V; Power Dissipation Pd:62.5W; Transistor Case Style:PowerPAK SO; No.

    MOSFET, N-CH, 30V, 40A, 150DEG C, 62.5W; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.1V; Power Dissipation Pd:62.5W; Transistor Case Style:PowerPAK SO; No.

    Vishay Sir164Adp-T1-Ge3 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • VISHAY
    • MOSFET, N-CH, 600V, 40A, 150DEG C, 313W; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.061ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:313W; Transistor Case Style:TO-247AC; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • VISHAY
    • MOSFET, N-CH, 800V, 4.3A, 150DEG C, 69W; Transistor Polarity:N Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:69W; Transistor Case Style:TO-252; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • VISHAY
    • MOSFET, N-CH, 600V, 40A, 150DEG C, 313W; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.061ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:313W; Transistor Case Style:TO-247AC; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • VISHAY
    • MOSFET, N-CH, 800V, 4.3A, 150DEG C, 69W; Transistor Polarity:N Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:69W; Transistor Case Style:TO-252; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • VISHAY