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ONSEMI

Onsemi Pzta42T1G

About The 5W; DC Collector Current:50mA; DC Current Gain hFE:50hFE; Transistor Case Style:SOT-223; No.

TRANSISTOR; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:300V; Transition Frequency ft:50MHz; Power Dissipation Pd:1.5W; DC Collector Current:50mA; DC Current Gain hFE:50hFE; Transistor Case Style:SOT-223; No. of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):500mV; Current Ic Continuous a Max:50mA; Diode Type:Standard Recovery; Hfe Min:25; Junction Temperature Tj Max:150°C; Termination Type:Surface Mount Device

Semiconductors - Discretes

Onsemi Pzta42T1G

Semiconductors - Discretes

Specifications of Onsemi Pzta42T1G

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Onsemi Pzta42T1G
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Votes :- 54
THYRISTOR; Peak Repetitive Off-State Voltage, Vdrm:100V; Gate Trigger Current Max, Igt:25µA; Current It av:2.6A; On State RMS Current IT(rms):4A; Thyristor Case Style:TO-252; No.

THYRISTOR; Peak Repetitive Off-State Voltage, Vdrm:100V; Gate Trigger Current Max, Igt:25µA; Current It av:2.6A; On State RMS Current IT(rms):4A; Thyristor Case Style:TO-252; No.

Littelfuse Mcr703At4G of Pins:3Pins; Peak Non Rep Surge Current Itsm 50Hz:25A; Holding Current Max Ih:5mA; Gate Trigger Voltage Max Vgt:800mV; Operating Temperature Max:110°C; Product Range:-; MSL:-; Current Itsm:25A; Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +110°C; Termination Type:Surface Mount Device; Thyristor Case:TO-252; Thyristor Type:Thyristor.

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  • LITTELFUSE
    • MOSFET, P; Transistor Polarity:P Channel; Continuous Drain Current Id:3.4A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.105ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.8V; Power Dissipation Pd:3W; Transistor Case Style:SOT-223; No.

    MOSFET, P; Transistor Polarity:P Channel; Continuous Drain Current Id:3.4A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.105ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.8V; Power Dissipation Pd:3W; Transistor Case Style:SOT-223; No.

    4A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Voltage Vds Typ:30V; Voltage Vgs Max:-1.Onsemi Fdt458P of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:3.8V; Voltage Vgs Rds on Measurement:10V.

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    • TRANSISTOR; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:300V; Transition Frequency ft:50MHz; Power Dissipation Pd:1.5W; DC Collector Current:50mA; DC Current Gain hFE:50hFE; Transistor Case Style:SOT-223; No.

    TRANSISTOR; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:300V; Transition Frequency ft:50MHz; Power Dissipation Pd:1.5W; DC Collector Current:50mA; DC Current Gain hFE:50hFE; Transistor Case Style:SOT-223; No.

    Onsemi Pzta42T1G of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):500mV; Current Ic Continuous a Max:50mA; Diode Type:Standard Recovery; Hfe Min:25; Junction Temperature Tj Max:150°C; Termination Type:Surface Mount Device.

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  • ONSEMI
    • MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.065ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:70W; Transistor Case Style:TO-252; No.

    MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.065ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:70W; Transistor Case Style:TO-252; No.

    Stmicroelectronics Std15Nf10T4 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (17-Dec-2015); Current Id Max:23A; On State resistance @ Vgs = 10V:65mohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Termination Type:Surface Mount Device; Voltage Vds Typ:100V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V.

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  • STMICROELECTRONICS
    • TRANSISTOR; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:150MHz; Power Dissipation Pd:225mW; DC Collector Current:500mA; DC Current Gain hFE:150hFE; Transistor Case Style:SOT-23; No.

    TRANSISTOR; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:150MHz; Power Dissipation Pd:225mW; DC Collector Current:500mA; DC Current Gain hFE:150hFE; Transistor Case Style:SOT-23; No.

    Onsemi Mmbt8099Lt1G of Pins:3Pins; Operating Temperature Max:150°C; Product Range:MMBTxxxx Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):300mV; Current Ic Continuous a Max:500mA; Gain Bandwidth ft Typ:150MHz; Hfe Min:75; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device.

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  • ONSEMI
    • MOSFET, P; Transistor Polarity:P Channel; Continuous Drain Current Id:3.4A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.105ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.8V; Power Dissipation Pd:3W; Transistor Case Style:SOT-223; No.

    MOSFET, P; Transistor Polarity:P Channel; Continuous Drain Current Id:3.4A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.105ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.8V; Power Dissipation Pd:3W; Transistor Case Style:SOT-223; No.

    Onsemi Fdt458P of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:3.

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  • ONSEMI
    • TRANSISTOR; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:300V; Transition Frequency ft:50MHz; Power Dissipation Pd:1.5W; DC Collector Current:50mA; DC Current Gain hFE:50hFE; Transistor Case Style:SOT-223; No.

    TRANSISTOR; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:300V; Transition Frequency ft:50MHz; Power Dissipation Pd:1.5W; DC Collector Current:50mA; DC Current Gain hFE:50hFE; Transistor Case Style:SOT-223; No.

    Onsemi Pzta42T1G of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):500mV; Current Ic Continuous a Max:50mA; Diode Type:Standard Recovery; Hfe Min:25; Junction Temperature Tj Max:150°C; Termination Type:Surface Mount Device.

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  • ONSEMI
    • MOSFET, NN; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:9.4A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.014ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No.

    MOSFET, NN; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:9.4A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.014ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No.

    01ohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Voltage Vds Typ:20V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:4.

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  • ONSEMI
    • TRANSISTOR; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:300V; Transition Frequency ft:50MHz; Power Dissipation Pd:1.5W; DC Collector Current:50mA; DC Current Gain hFE:50hFE; Transistor Case Style:SOT-223; No.

    TRANSISTOR; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:300V; Transition Frequency ft:50MHz; Power Dissipation Pd:1.5W; DC Collector Current:50mA; DC Current Gain hFE:50hFE; Transistor Case Style:SOT-223; No.

    Onsemi Pzta42T1G of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):500mV; Current Ic Continuous a Max:50mA; Diode Type:Standard Recovery; Hfe Min:25; Junction Temperature Tj Max:150°C; Termination Type:Surface Mount Device.

  • Eletrônicos
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  • ONSEMI
    • MOSFET, NN; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:9.4A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.014ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No.

    MOSFET, NN; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:9.4A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.014ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No.

    01ohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Voltage Vds Typ:20V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:4.4A; Current Id Max:9.5V.

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  • ONSEMI