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Infineon Bcv62Ce6327Htsa1

About The TRANSISTOR, DUAL, PNP, SOT-143; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:30V; Power Dissipation Pd:300mW; DC Collector Current:100mA; DC Current Gain hFE:520hFE; Transistor Case Style:SOT-143; No.9mm; Gain Bandwidth ft Typ:250MHz; Hfe Min:125; Module Configuration:Dual; No

TRANSISTOR, DUAL, PNP, SOT-143; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:30V; Power Dissipation Pd:300mW; DC Collector Current:100mA; DC Current Gain hFE:520hFE; Transistor Case Style:SOT-143; No. of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):650mV; Continuous Collector Current Ic Max:100mA; Current Ic @ Vce Sat:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:2mA; External Depth:2.6mm; External Length / Height:1mm; External Width:2.9mm; Gain Bandwidth ft Typ:250MHz; Hfe Min:125; Module Configuration:Dual; No. of Transistors:2; Pin Configuration:b; Power Dissipation Ptot Max:300mW; SMD Marking:3Ls; Transition Frequency ft:250MHz; Voltage Vcbo:30V

Semiconductors - Discretes

Infineon Bcv62Ce6327Htsa1

Semiconductors - Discretes

Specifications of Infineon Bcv62Ce6327Htsa1

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Infineon Bcv62Ce6327Htsa1
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