Infineon Bas7004E6327Htsa1

Rating :- 9.91 /10

Votes :- 54

of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:-; SVHC:No SVHC (27-Jun-2018); Avalanche Single Pulse Energy Eas:2.6mJ; Capacitance Ciss Typ:19pF; Current Idss Max:1ÂµA; Current Temperature:25Â°C; Device Marking:YBs; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Fall Time tf:34ns; Full Power Rating Temperature:25Â°C; Junction Temperature Tj Max:150Â°C; Junction Temperature Tj Min:-55Â°C; No.

17A, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-170mA; Drain Source Voltage Vds:-60V; On Resistance Rds(on):8ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.5V:12ohm; Operating Temperature Min:-55Â°C; Operating Temperature Range:-55Â°C to +150Â°C; Pulse Current Idm:680mA; Rate of Voltage Change dv / dt:6kV/Âµs; Repetitive Avalanche Energy Max:0.of Transistors:1; On State Resistance @ Vgs = 4.

of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Continuous Collector Current Ic:25mA; Continuous Collector Current Ic Max:50mA; Current Ic Continuous a Max:50mA; Current Ic hFE:25mA; Forward Current Transfer Ratio:1:10; Gain Bandwidth ft Min:1GHz; Gain Bandwidth ft Typ:2.5GHz; Hfe Min:20; No.

Infineon Bfs17Pe6327Htsa1.of Transistors:1; Noise Figure Typ:3.

of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:-; SVHC:No SVHC (27-Jun-2018); Associated Gain Ga:16dB; Av Current Ic:45mA; Continuous Collector Current Ic:45mA; Continuous Collector Current Ic Max:30mA; Current Ic Continuous a Max:30mA; Current Ic hFE:14mA; Gain Bandwidth ft Min:3.5GHz; Gain Bandwidth ft Typ:5GHz; Hfe Min:40; No.

of Transistors:1; Noise Figure Typ:1. Infineon Bfr92Pe6327Htsa1.4dB; Operating Temperature Min:-65Â°C; Operating Temperature Range:-65Â°C to +150Â°C; Power Dissipation Ptot Max:280mW; SMD Marking:GF; Termination Type:Surface Mount Device; Test Frequency:900MHz; Transistor Case Style:SOT-23; Voltage Vcbo:20V RF TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:15V; Transition Frequency ft:5GHz; Power Dissipation Pd:280mW; DC Collector Current:45mA; DC Current Gain hFE:100hFE; RF Transistor Case:SOT-23; No.

of Pins:4Pins; Operating Temperature Max:150Â°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):650mV; Continuous Collector Current Ic Max:100mA; Current Ic @ Vce Sat:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:2mA; External Depth:2.6mm; External Length / Height:1mm; External Width:2.9mm; Gain Bandwidth ft Typ:250MHz; Hfe Min:125; Module Configuration:Dual; No.

Infineon Bcv62Ce6327Htsa1.

of Pins:4Pins; Operating Temperature Max:150Â°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):600mV; Continuous Collector Current Ic Max:100mA; Current Ic @ Vce Sat:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:2mA; External Depth:2.6mm; External Length / Height:1mm; External Width:2.9mm; Gain Bandwidth ft Typ:250MHz; Hfe Min:110; Module Configuration:Dual; No.

Infineon Bcv61Ce6327Htsa1.of Transistors:2; Pin Configuration:a; Power Dissipation Ptot Max:300mW; SMD Marking:1Ls; Transition Frequency ft:250MHz; Voltage Vcbo:30V TRANSISTOR, DUAL, NPN, SOT-143; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Power Dissipation Pd:300mW; DC Collector Current:100mA; DC Current Gain hFE:520hFE; Transistor Case Style:SOT-143; No.

DIODE, SCHOTTKY, 40V, 0.5A, SOD-323; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:40V; Forward Current If(AV):500mA; Forward Voltage VF Max:700mV; Forward Surge Current Ifsm Max:2.5A; Operating Temperature Max:150Â°C; Diode Case Style:SOD-323; No.

5A; Current Ir Max:50ÂµA; Device Marking:C; Diode Type:Schottky; Forward Current If Max:750mA; Junction Temperature Tj Max:150Â°C; Reverse Voltage Vr Max:40V; SMD Marking:C; Termination Type:Surface Mount Device; Vr Ir Measurement Voltage:30V.Infineon Bat165E6327Htsa1 of Pins:2Pins; Product Range:BAT165 Series; Automotive Qualification Standard:AEC-Q101; SVHC:No SVHC (27-Jun-2018); Alternate Case Style:SC-76; Breakdown Voltage:40V; Current If @ Vf:250mA; Current Ifsm:2.

DIODE, SCHOTTKY, SOT-23; Diode Configuration:Dual Series; Repetitive Reverse Voltage Vrrm Max:70V; Forward Current If(AV):70mA; Forward Voltage VF Max:700mV; Forward Surge Current Ifsm Max:100mA; Operating Temperature Max:125Â°C; Diode Case Style:SOT-23; No.

Infineon Bas7004E6327Htsa1 of Pins:3Pins; Product Range:BAS7 Series; Automotive Qualification Standard:AEC-Q101; SVHC:No SVHC (27-Jun-2018); Common Connection:Anode / Cathode; Current If @ Vf:1mA; Current Ifsm:100mA; Device Marking:74; Diode Type:Schottky; Junction Temperature Tj Max:125Â°C; Operating Temperature Min:-55Â°C; Operating Temperature Range:-55Â°C to +125Â°C; Reverse Voltage Vr Max:410mV; SMD Marking:74; Termination Type:Surface Mount Device.

of Pins:4Pins; Operating Temperature Max:150Â°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):650mV; Continuous Collector Current Ic Max:100mA; Current Ic @ Vce Sat:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:2mA; External Depth:2.6mm; External Length / Height:1mm; External Width:2.9mm; Gain Bandwidth ft Typ:250MHz; Hfe Min:125; Module Configuration:Dual; No.

Infineon Bcv62Ce6327Htsa1.of Transistors:2; Pin Configuration:b; Power Dissipation Ptot Max:300mW; SMD Marking:3Ls; Transition Frequency ft:250MHz; Voltage Vcbo:30V TRANSISTOR, DUAL, PNP, SOT-143; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:30V; Power Dissipation Pd:300mW; DC Collector Current:100mA; DC Current Gain hFE:520hFE; Transistor Case Style:SOT-143; No.