Ixys Semiconductor Dsep2X91-06A

Rating :- 9.94 /10

Votes :- 51

MOSFET, N, TO-264; Transistor Polarity:N Channel; Continuous Drain Current Id:48A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.135ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:830W; Transistor Case Style:TO-264; No.

15Â°C/W; N-channel Gate Charge:150nC; Operating Temperature Min:-55Â°C; Operating Temperature Range:-55Â°C to +150Â°C; Reverse Recovery Time trr Max:200ns; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V.Ixys Semiconductor Ixfk48N60P of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Capacitance Ciss Typ:8860pF; Current Id Max:48A; Junction to Case Thermal Resistance A:0.

MOSFET, N, TO-264; Transistor Polarity:N Channel; Continuous Drain Current Id:140A; Drain Source Voltage Vds:300V; On Resistance Rds(on):0.024ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:1.04kW; Transistor Case Style:TO-264; No.

12Â°C/W; N-channel Gate Charge:185nC; Operating Temperature Min:-55Â°C; Operating Temperature Range:-55Â°C to +150Â°C; Reverse Recovery Time trr Max:200ns; Termination Type:Through Hole; Voltage Vds Typ:300V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V.

MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:460W; Transistor Case Style:TO-247; No.

Ixys Semiconductor Ixfh30N50P of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Capacitance Ciss Typ:4150pF; Current Id Max:30A; Junction to Case Thermal Resistance A:0.27Â°C/W; N-channel Gate Charge:70nC; Operating Temperature Min:-55Â°C; Operating Temperature Range:-55Â°C to +150Â°C; Reverse Recovery Time trr Max:200ns; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V.

MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:170A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.009ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:5V; Power Dissipation Pd:714W; Transistor Case Style:TO-247; No.

Ixys Semiconductor Ixfh170N10P of Pins:3Pins; Operating Temperature Max:175Â°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Capacitance Ciss Typ:6000pF; Current Id Max:170A; Junction to Case Thermal Resistance A:0.21Â°C/W; N-channel Gate Charge:198nC; Operating Temperature Min:-55Â°C; Operating Temperature Range:-55Â°C to +175Â°C; Reverse Recovery Time trr Max:150ns; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V.

MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:460W; Transistor Case Style:TO-247; No.

Ixys Semiconductor Ixfh16N80P of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Capacitance Ciss Typ:4000pF; Current Id Max:16A; Junction to Case Thermal Resistance A:0.

MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:714W; Transistor Case Style:TO-247; No.

Ixys Semiconductor Ixfh120N20P of Pins:3Pins; Operating Temperature Max:175Â°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Capacitance Ciss Typ:6000pF; Current Id Max:120A; Junction to Case Thermal Resistance A:0.21Â°C/W; N-channel Gate Charge:152nC; Operating Temperature Min:-55Â°C; Operating Temperature Range:-55Â°C to +175Â°C; Reverse Recovery Time trr Max:200ns; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V.

of Phases:Single Phase; No.

6Â°C/W; Module Configuration:Dual; No.of Pins:4Pins; Operating Temperature Max:150Â°C; Operating Temperature Min:-40Â°C; Operating Temperature Range:-40Â°C to +150Â°C; Pin Configuration:Dual; Reverse Recovery Time trr Max:35ns; Reverse Recovery Time trr Typ:35ns; Termination Type:Screw; Time on for IFSM:10ms DIODE, FAST, 180A, SOT-227B; Repetitive Reverse Voltage Vrrm Max:600V; Forward Current If(AV):90A; Forward Voltage VF Max:2.52V; Junction to Case Thermal Resistance A:0. Ixys Semiconductor Dsep2X91-06A.

of Phases:Single Phase; No.

85Â°C/W; Module Configuration:Dual; No.68V; Diode Module Configuration:Dual Isolated; Product Range:DSEP2 Series; SVHC:No SVHC (12-Jan-2017); Case Temperature Tc @ If:75Â°C; Current If @ Vf:60A; Diode Case Style:SOT-227B; Diode Configuration:Dual Isolated; Diode Type:Soft Recovery; Forward Surge Current Ifsm Max:600A; Forward Voltage:1.

of Phases:Single Phase; No.

6Â°C/W; Module Configuration:Dual; No. Ixys Semiconductor Dsep2X91-06A.05V; Diode Module Configuration:Dual Isolated; Product Range:DSEP2 Series; SVHC:No SVHC (12-Jan-2017); Case Temperature Tc @ If:55Â°C; Current If @ Vf:90A; Diode Case Style:SOT-227B; Diode Configuration:Dual Isolated; Diode Type:Soft Recovery; Forward Surge Current Ifsm Max:1kA; Forward Voltage:1.

of Phases:Single Phase; No.

85Â°C/W; Module Configuration:Dual; No.26V; Junction to Case Thermal Resistance A:0.of Pins:4Pins; Operating Temperature Max:150Â°C; Operating Temperature Min:-40Â°C; Operating Temperature Range:-40Â°C to +150Â°C; Pin Configuration:Dual; Reverse Recovery Time trr Max:30ns; Reverse Recovery Time trr Typ:30ns; Termination Type:Screw; Time on for IFSM:10ms DIODE, FAST, 120A, SOT-227B; Repetitive Reverse Voltage Vrrm Max:300V; Forward Current If(AV):60A; Forward Voltage VF Max:1. Ixys Semiconductor Dsep2X61-03A.