25V; Junction Temperature Tj Max:150°C; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Peak Forward Current:500mA; Pin Configuration:1A1,2A2,3ComK; Power Dissipation Ptot Max:200mW; Reverse Recovery Time trr Typ:4ns; Reverse Voltage Vr Max:75V; SMD Marking:A4; Termination Type:Surface Mount Device.
Nexperia Bav74,215 of Pins:3Pins; Product Range:BAV74 Series; Automotive Qualification Standard:-; SVHC:No SVHC (27-Jun-2018); Application Code:High Speed; Current If @ Vf:100mA; Current Ifsm:4A; Current Ir Max:30nA; Forward Current If Max:125mA; Forward Voltage:1V; Junction Temperature Tj Max:150°C; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Peak Forward Current:450mA; Pin Configuration:1A1,2A2,3ComK; Power Dissipation Ptot Max:250W; Reverse Recovery Time trr Typ:4ns; Reverse Voltage Vr Max:60V; SMD Marking:JA; Termination Type:Surface Mount Device.
25V; Junction Temperature Tj Max:150°C; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Peak Forward Current:450mA; Pin Configuration:1A1,2K2,3(K1+A2); Power Dissipation Ptot Max:250W; Reverse Recovery Time trr Typ:4ns; Reverse Voltage Vr Max:75V; SMD Marking:A7*; Termination Type:Surface Mount Device; Vr Ir Measurement Voltage:25V.Nexperia Bav99,215 of Pins:3Pins; Product Range:BAV99 Series; Automotive Qualification Standard:-; SVHC:No SVHC (27-Jun-2018); Application Code:High Speed; Breakdown Voltage:75V; Current If @ Vf:150mA; Current Ifsm:4A; Current Ir Max:30nA; Forward Current If Max:215mA; Forward Voltage:1.
25V; Junction Temperature Tj Max:150°C; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Peak Forward Current:500mA; Pin Configuration:1A1,2K2,3(K1+A2); Power Dissipation Ptot Max:200W; Reverse Recovery Time trr Typ:4ns; Reverse Voltage Vr Max:75V; SMD Marking:A7; Termination Type:Surface Mount Device.
25V; Junction Temperature Tj Max:150°C; Peak Forward Current:450mA; Pin Configuration:1K1,2K2,3comA; Power Dissipation Ptot Max:250mW; Reverse Recovery Time trr Typ:4ns; Reverse Voltage Vr Max:75V; SMD Marking:A1*; Termination Type:Surface Mount Device.Nexperia Baw56,215 of Pins:3Pins; Product Range:BAW56 Series; Automotive Qualification Standard:-; SVHC:No SVHC (27-Jun-2018); Application Code:High Speed; Current If @ Vf:150A; Current Ifsm:4A; Current Ir Max:30nA; Forward Current If Max:125mA; Forward Voltage:1.
of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; SMD Marking:5D; Termination Type:Surface Mount Device; Voltage Vcbo:50V TRANSISTOR, PNP, 45V, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V; Transition Frequency ft:80MHz; Power Dissipation Pd:250mW; DC Collector Current:-500mA; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-23; No. Nexperia Bc807,215.
of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; SMD Marking:5A; Termination Type:Surface Mount Device; Voltage Vcbo:50V TRANSISTOR, PNP, -45V, -0. Nexperia Bc807-16,215.
Nexperia Bav99,215 of Pins:3Pins; Product Range:BAV99 Series; Automotive Qualification Standard:-; SVHC:No SVHC (27-Jun-2018); Application Code:High Speed; Breakdown Voltage:75V; Current If @ Vf:150mA; Current Ifsm:4A; Current Ir Max:30nA; Forward Current If Max:215mA; Forward Voltage:1.
Nexperia Bav99W,115 of Pins:3Pins; Product Range:BAV99 Series; Automotive Qualification Standard:-; SVHC:No SVHC (27-Jun-2018); Application Code:High Speed; Current If @ Vf:150mA; Current Ifsm:4A; Current Ir Max:30nA; Forward Current If Max:130mA; Forward Voltage:1.25V; Junction Temperature Tj Max:150°C; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Peak Forward Current:500mA; Pin Configuration:1A1,2K2,3(K1+A2); Power Dissipation Ptot Max:200W; Reverse Recovery Time trr Typ:4ns; Reverse Voltage Vr Max:75V; SMD Marking:A7; Termination Type:Surface Mount Device.
Nexperia Baw56,215 of Pins:3Pins; Product Range:BAW56 Series; Automotive Qualification Standard:-; SVHC:No SVHC (27-Jun-2018); Application Code:High Speed; Current If @ Vf:150A; Current Ifsm:4A; Current Ir Max:30nA; Forward Current If Max:125mA; Forward Voltage:1.25V; Junction Temperature Tj Max:150°C; Peak Forward Current:450mA; Pin Configuration:1K1,2K2,3comA; Power Dissipation Ptot Max:250mW; Reverse Recovery Time trr Typ:4ns; Reverse Voltage Vr Max:75V; SMD Marking:A1*; Termination Type:Surface Mount Device.
of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; SMD Marking:5D; Termination Type:Surface Mount Device; Voltage Vcbo:50V TRANSISTOR, PNP, 45V, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V; Transition Frequency ft:80MHz; Power Dissipation Pd:250mW; DC Collector Current:-500mA; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-23; No. Nexperia Bc807,215.
of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; SMD Marking:5A; Termination Type:Surface Mount Device; Voltage Vcbo:50V TRANSISTOR, PNP, -45V, -0.5A, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:-; Power Dissipation Pd:250mW; DC Collector Current:500mA; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-23; No. Nexperia Bc807-16,215.
5A, SOT23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V; Transition Frequency ft:80MHz; Power Dissipation Pd:250mW; DC Collector Current:-500mA; DC Current Gain hFE:250hFE; Transistor Case Style:TO-236AB; No.
of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; SMD Marking:6D; Termination Type:Surface Mount Device; Voltage Vcbo:50V TRANSISTOR, NPN, 45V, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:500mA; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-23; No. Nexperia Bc817,215.
Nexperia Bc817-25,215.5A, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:500mA; DC Current Gain hFE:160hFE; Transistor Case Style:TO-236AB; No.of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; SMD Marking:6B; Termination Type:Surface Mount Device; Voltage Vcbo:50V TRANSISTOR, BJT, NPN, 45V, 0.
5A, SOT23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:-; Power Dissipation Pd:250mW; DC Collector Current:500mA; DC Current Gain hFE:250hFE; Transistor Case Style:SOT-23; No.
of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; SMD Marking:5B; Termination Type:Surface Mount Device; Voltage Vcbo:50V TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:-500mA; DC Current Gain hFE:160hFE; Transistor Case Style:SOT-23; No. Nexperia Bc807-25,215.
5A, SOT23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V; Transition Frequency ft:80MHz; Power Dissipation Pd:250mW; DC Collector Current:-500mA; DC Current Gain hFE:250hFE; Transistor Case Style:TO-236AB; No. Nexperia Bc807-40,215.of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; SMD Marking:5C; Termination Type:Surface Mount Device; Voltage Vcbo:50V TRANSISTOR, PNP, 45V, 0.
5A, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:500mA; DC Current Gain hFE:160hFE; Transistor Case Style:TO-236AB; No. Nexperia Bc817-25,215.
of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; SMD Marking:6C; Termination Type:Surface Mount Device; Voltage Vcbo:50V TRANSISTOR, NPN, 45V, 0.5A, SOT23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:-; Power Dissipation Pd:250mW; DC Collector Current:500mA; DC Current Gain hFE:250hFE; Transistor Case Style:SOT-23; No. Nexperia Bc817-40,215.
of Transistors:1; Noise Factor Max:10dB; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; SMD Marking:1D*; Termination Type:Surface Mount Device; Voltage Vcbo:80V TRANSISTOR, NPN, 65V, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:65V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:110hFE; Transistor Case Style:SOT-23; No.
Nexperia Bc846B,215.of Transistors:1; Noise Factor Max:10dB; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; SMD Marking:1B; Termination Type:Surface Mount Device; Voltage Vcbo:80V TRANSISTOR, NPN, 65V, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:65V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:200hFE; Transistor Case Style:SOT-23; No.
, NPN, 45V, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:110hFE; Transistor Case Style:SOT-23; No.of Transistors:1; Noise Factor Max:10dB; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; SMD Marking:1H; Termination Type:Surface Mount Device; Voltage Vcbo:50V TRANSISTOR,BIPOL. Nexperia Bc847,215.
of Transistors:1; Noise Factor Max:10dB; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; SMD Marking:1E; Termination Type:Surface Mount Device; Voltage Vcbo:50V TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:110hFE; Transistor Case Style:SOT-23; No.
1A, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:65V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:110hFE; Transistor Case Style:SOT-23; No.
of Transistors:1; Noise Factor Max:10dB; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; SMD Marking:1B; Termination Type:Surface Mount Device; Voltage Vcbo:80V TRANSISTOR, NPN, 65V, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:65V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:200hFE; Transistor Case Style:SOT-23; No.