of Transistors:1; Noise Factor Max:10dB; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; SMD Marking:H2; Termination Type:Surface Mount Device; Voltage Vcbo:50V TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:-; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:150hFE; Transistor Case Style:SOT-23; No.
of Transistors:1; Noise Factor Max:10dB; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; SMD Marking:D2; Termination Type:Surface Mount Device; Voltage Vcbo:32V TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:32V; Transition Frequency ft:-; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:330hFE; Transistor Case Style:SOT-23; No. Nexperia Bcw32,215.
Nexperia Bcw60B,215.of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; SMD Marking:AB; Termination Type:Surface Mount Device; Voltage Vcbo:32V TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:32V; Transition Frequency ft:250MHz; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:180hFE; Transistor Case Style:SOT-23; No.
of Transistors:1; Noise Factor Max:10dB; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; SMD Marking:H2; Termination Type:Surface Mount Device; Voltage Vcbo:50V TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:-; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:150hFE; Transistor Case Style:SOT-23; No. Nexperia Bcw70,215.
of Transistors:1; Noise Factor Max:10dB; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; SMD Marking:K1; Termination Type:Surface Mount Device; Voltage Vcbo:50V TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:-; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:90hFE; Transistor Case Style:SOT-23; No. Nexperia Bcw71,215.
Nexperia Bcw72,215.of Transistors:1; Noise Factor Max:10dB; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; SMD Marking:K2; Termination Type:Surface Mount Device; Voltage Vcbo:50V TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:150hFE; Transistor Case Style:SOT-23; No.
of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:200mW; SMD Marking:T1; Termination Type:Surface Mount Device; Voltage Vcbo:50V TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:-; Power Dissipation Pd:250mW; DC Collector Current:500mA; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-23; No. Nexperia Bcx17,215.
Nexperia Bcx19,215.of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:200mW; SMD Marking:U1; Termination Type:Surface Mount Device; Voltage Vcbo:50V TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:-; Power Dissipation Pd:250mW; DC Collector Current:500mA; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-23; No.
of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:500mW; SMD Marking:AA; Termination Type:Surface Mount Device; Voltage Vcbo:45V TRANSISTOR, PNP, SOT-89; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:145MHz; Power Dissipation Pd:500mW; DC Collector Current:1A; DC Current Gain hFE:63hFE; Transistor Case Style:SOT-89; No. Nexperia Bcx51,115.
Nexperia Bcx51-16,115.3W; SMD Marking:AD; Termination Type:Surface Mount Device; Voltage Vcbo:-45V TRANSISTOR, PNP, SOT-89; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:145MHz; Power Dissipation Pd:500mW; DC Collector Current:1A; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-89; No.
of Transistors:1; Noise Factor Max:10dB; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; SMD Marking:K2; Termination Type:Surface Mount Device; Voltage Vcbo:50V TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:150hFE; Transistor Case Style:SOT-23; No.
of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:200mW; SMD Marking:T1; Termination Type:Surface Mount Device; Voltage Vcbo:50V TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:-; Power Dissipation Pd:250mW; DC Collector Current:500mA; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-23; No. Nexperia Bcx17,215.
of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:200mW; SMD Marking:U1; Termination Type:Surface Mount Device; Voltage Vcbo:50V TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:-; Power Dissipation Pd:250mW; DC Collector Current:500mA; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-23; No. Nexperia Bcx19,215.
of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:500mW; SMD Marking:AA; Termination Type:Surface Mount Device; Voltage Vcbo:45V TRANSISTOR, PNP, SOT-89; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:145MHz; Power Dissipation Pd:500mW; DC Collector Current:1A; DC Current Gain hFE:63hFE; Transistor Case Style:SOT-89; No. Nexperia Bcx51,115.
3W; SMD Marking:AL; Termination Type:Surface Mount Device; Voltage Vcbo:-100V TRANSISTOR, PNP, SOT-89; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-80V; Transition Frequency ft:145MHz; Power Dissipation Pd:500mW; DC Collector Current:-1A; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-89; No.of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:1.
of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:500mW; SMD Marking:BA; Termination Type:Surface Mount Device; Voltage Vcbo:45V TRANSISTOR, NPN, SOT-89; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:180MHz; Power Dissipation Pd:500mW; DC Collector Current:1A; DC Current Gain hFE:63hFE; Transistor Case Style:SOT-89; No.
of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:500mW; SMD Marking:BE; Termination Type:Surface Mount Device; Voltage Vcbo:60V TRANSISTOR, NPN, SOT-89; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:180MHz; Power Dissipation Pd:500mW; DC Collector Current:1A; DC Current Gain hFE:63hFE; Transistor Case Style:SOT-89; No. Nexperia Bcx55,115.
of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:500mW; SMD Marking:BM; Termination Type:Surface Mount Device; Voltage Vcbo:60V TRANSISTOR, NPN, SOT-89; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:180MHz; Power Dissipation Pd:500mW; DC Collector Current:1A; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-89; No.
of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:500mW; SMD Marking:BH; Termination Type:Surface Mount Device; Voltage Vcbo:100V TRANSISTOR, NPN, SOT-89; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:180MHz; Power Dissipation Pd:500mW; DC Collector Current:1A; DC Current Gain hFE:63hFE; Transistor Case Style:SOT-89; No. Nexperia Bcx56,115.
of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:500mW; SMD Marking:BL; Termination Type:Surface Mount Device; Voltage Vcbo:100V TRANSISTOR, NPN, SOT-89; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:180MHz; Power Dissipation Pd:500mW; DC Collector Current:1A; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-89; No.
Nexperia Bcx53-16,146.3W; SMD Marking:AL; Termination Type:Surface Mount Device; Voltage Vcbo:-100V TRANSISTOR, PNP, SOT-89; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-80V; Transition Frequency ft:145MHz; Power Dissipation Pd:500mW; DC Collector Current:-1A; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-89; No.
of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:500mW; SMD Marking:BA; Termination Type:Surface Mount Device; Voltage Vcbo:45V TRANSISTOR, NPN, SOT-89; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:180MHz; Power Dissipation Pd:500mW; DC Collector Current:1A; DC Current Gain hFE:63hFE; Transistor Case Style:SOT-89; No. Nexperia Bcx54,115.
of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:500mW; SMD Marking:BE; Termination Type:Surface Mount Device; Voltage Vcbo:60V TRANSISTOR, NPN, SOT-89; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:180MHz; Power Dissipation Pd:500mW; DC Collector Current:1A; DC Current Gain hFE:63hFE; Transistor Case Style:SOT-89; No.
of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:500mW; SMD Marking:BM; Termination Type:Surface Mount Device; Voltage Vcbo:60V TRANSISTOR, NPN, SOT-89; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:180MHz; Power Dissipation Pd:500mW; DC Collector Current:1A; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-89; No. Nexperia Bcx55-16,115.
of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:500mW; SMD Marking:BH; Termination Type:Surface Mount Device; Voltage Vcbo:100V TRANSISTOR, NPN, SOT-89; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:180MHz; Power Dissipation Pd:500mW; DC Collector Current:1A; DC Current Gain hFE:63hFE; Transistor Case Style:SOT-89; No. Nexperia Bcx56,115.