of Transistors:1; Noise Factor Max:10dB; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; SMD Marking:3F; Termination Type:Surface Mount Device; Voltage Vcbo:50V TRANSISTOR, PNP, 45V, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:-100mA; DC Current Gain hFE:220hFE; Transistor Case Style:SOT-23; No.
of Transistors:2; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:200mW; Power Dissipation per device Max:300mW; SMD Marking:3Ft; Tape Width:8mm; Voltage Vcbo:50V TRANSISTOR, DUAL, PNP, SC-88; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:200mW; DC Collector Current:-100mA; DC Current Gain hFE:200hFE; Transistor Case Style:SC-88; No. Nexperia Bc857Bs,115.
Nexperia Bc860C,215.of Transistors:1; Noise Factor Max:3dB; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; SMD Marking:4G; Termination Type:Surface Mount Device; Voltage Vcbo:50V TRANSISTOR, PNP, 45V, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:420hFE; Transistor Case Style:SOT-23; No.
of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:1.3W; SMD Marking:BCP51/16; Termination Type:Surface Mount Device; Voltage Vcbo:45V TRANSISTOR, PNP, SOT-223; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:145MHz; Power Dissipation Pd:650mW; DC Collector Current:1A; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-223; No. Nexperia Bcp51-16,115.
of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:1. Nexperia Bcp53,115.5W; SMD Marking:BCP53; Termination Type:Surface Mount Device; Voltage Vcbo:100V TRANSISTOR, PNP, SOT-223; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:145MHz; Power Dissipation Pd:650mW; DC Collector Current:1A; DC Current Gain hFE:63hFE; Transistor Case Style:SOT-223; No.
2W; SMD Marking:BCP54; Termination Type:Surface Mount Device; Voltage Vcbo:45V TRANSISTOR, NPN, SOT-223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:180MHz; Power Dissipation Pd:640mW; DC Collector Current:1A; DC Current Gain hFE:63hFE; Transistor Case Style:SOT-223; No. Nexperia Bcp54,115.
of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:1. Nexperia Bcp51,115.3W; SMD Marking:BCP51; Termination Type:Surface Mount Device; Voltage Vcbo:45V TRANSISTOR, PNP, SOT-223; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:145MHz; Power Dissipation Pd:650mW; DC Collector Current:1A; DC Current Gain hFE:63hFE; Transistor Case Style:SOT-223; No.
Nexperia Bcp51-16,115.3W; SMD Marking:BCP51/16; Termination Type:Surface Mount Device; Voltage Vcbo:45V TRANSISTOR, PNP, SOT-223; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:145MHz; Power Dissipation Pd:650mW; DC Collector Current:1A; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-223; No.
of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:1.3W; SMD Marking:BCP53/16; Termination Type:Surface Mount Device; Voltage Vcbo:100V TRANSISTOR, PNP, SOT-223; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-80V; Transition Frequency ft:145MHz; Power Dissipation Pd:650mW; DC Collector Current:-1A; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-223; No. Nexperia Bcp53-16,115.
of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:1.2W; SMD Marking:BCP54; Termination Type:Surface Mount Device; Voltage Vcbo:45V TRANSISTOR, NPN, SOT-223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:180MHz; Power Dissipation Pd:640mW; DC Collector Current:1A; DC Current Gain hFE:63hFE; Transistor Case Style:SOT-223; No.
Nexperia Bcp56,115.of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:650mW; SMD Marking:BCP56; Termination Type:Surface Mount Device; Voltage Vcbo:100V TRANSISTOR, NPN, SOT-223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:180MHz; Power Dissipation Pd:650mW; DC Collector Current:1A; DC Current Gain hFE:63hFE; Transistor Case Style:SOT-223; No.
of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:650mW; SMD Marking:BCP56/16; Termination Type:Surface Mount Device; Voltage Vcbo:100V TRANSISTOR, NPN, SOT-223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:180MHz; Power Dissipation Pd:650mW; DC Collector Current:1A; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-223; No. Nexperia Bcp56-16,115.
of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:1W; SMD Marking:BCP69; Termination Type:Surface Mount Device; Voltage Vcbo:32V TRANSISTOR, PNP, SOT-223; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-20V; Transition Frequency ft:140MHz; Power Dissipation Pd:650mW; DC Collector Current:-2A; DC Current Gain hFE:85hFE; Transistor Case Style:SOT-223; No. Nexperia Bcp69,115.
of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; SMD Marking:FG*; Termination Type:Surface Mount Device; Transistor Type:Darlington; Voltage Vcbo:80V DARLINGTON TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:220MHz; Power Dissipation Pd:250mW; DC Collector Current:500mA; DC Current Gain hFE:10000hFE; Transistor Case Style:SOT-23; No. Nexperia Bcv47,215.
of Transistors:2; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; SMD Marking:3*P; Transition Frequency ft:100MHz; Voltage Vcbo:30V TRANSISTOR, DUAL, PNP, SOT-143B; Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:30V; Power Dissipation Pd:250mW; DC Collector Current:-100mA; DC Current Gain hFE:220hFE; Transistor Case Style:SOT-143B; No. Nexperia Bcv62B,215.
of Transistors:1; Noise Factor Max:10dB; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; SMD Marking:C2; Termination Type:Surface Mount Device; Voltage Vcbo:32V TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:32V; Transition Frequency ft:-; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:150hFE; Transistor Case Style:SOT-23; No. Nexperia Bcw30,215.
Nexperia Bcw30,215.of Transistors:1; Noise Factor Max:10dB; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; SMD Marking:C2; Termination Type:Surface Mount Device; Voltage Vcbo:32V TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:32V; Transition Frequency ft:-; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:150hFE; Transistor Case Style:SOT-23; No.
of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:650mW; SMD Marking:BCP56; Termination Type:Surface Mount Device; Voltage Vcbo:100V TRANSISTOR, NPN, SOT-223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:180MHz; Power Dissipation Pd:650mW; DC Collector Current:1A; DC Current Gain hFE:63hFE; Transistor Case Style:SOT-223; No. Nexperia Bcp56,115.
of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:650mW; SMD Marking:BCP56/16; Termination Type:Surface Mount Device; Voltage Vcbo:100V TRANSISTOR, NPN, SOT-223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:180MHz; Power Dissipation Pd:650mW; DC Collector Current:1A; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-223; No. Nexperia Bcp56-16,115.
of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:1W; SMD Marking:BCP69; Termination Type:Surface Mount Device; Voltage Vcbo:32V TRANSISTOR, PNP, SOT-223; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-20V; Transition Frequency ft:140MHz; Power Dissipation Pd:650mW; DC Collector Current:-2A; DC Current Gain hFE:85hFE; Transistor Case Style:SOT-223; No. Nexperia Bcp69,115.
of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; SMD Marking:FG*; Termination Type:Surface Mount Device; Transistor Type:Darlington; Voltage Vcbo:80V DARLINGTON TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:220MHz; Power Dissipation Pd:250mW; DC Collector Current:500mA; DC Current Gain hFE:10000hFE; Transistor Case Style:SOT-23; No. Nexperia Bcv47,215.
of Transistors:2; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; SMD Marking:3*P; Transition Frequency ft:100MHz; Voltage Vcbo:30V TRANSISTOR, DUAL, PNP, SOT-143B; Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:30V; Power Dissipation Pd:250mW; DC Collector Current:-100mA; DC Current Gain hFE:220hFE; Transistor Case Style:SOT-143B; No.
of Transistors:1; Noise Factor Max:10dB; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; SMD Marking:D2; Termination Type:Surface Mount Device; Voltage Vcbo:32V TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:32V; Transition Frequency ft:-; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:330hFE; Transistor Case Style:SOT-23; No. Nexperia Bcw32,215.
of Transistors:1; Noise Factor Max:10dB; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; SMD Marking:D3; Termination Type:Surface Mount Device; Voltage Vcbo:32V TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:32V; Transition Frequency ft:-; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:600hFE; Transistor Case Style:SOT-23; No. Nexperia Bcw33,215.
Nexperia Bcw60D,215.of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; SMD Marking:AD; Termination Type:Surface Mount Device; Voltage Vcbo:32V TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:32V; Transition Frequency ft:250MHz; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:380hFE; Transistor Case Style:SOT-23; No.