of Transistors:1; Noise Factor Max:10dB; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; SMD Marking:1E; Termination Type:Surface Mount Device; Voltage Vcbo:50V TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:110hFE; Transistor Case Style:SOT-23; No. Nexperia Bc847A,215.
of Transistors:1; Noise Factor Max:10dB; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:200mW; SMD Marking:1F; Termination Type:Surface Mount Device; Voltage Vcbo:50V TRANSISTOR, NPN, 45V, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:200hFE; Transistor Case Style:TO-236AB; No.
of Transistors:2; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:200mW; Power Dissipation per device Max:300mW; SMD Marking:13t; Tape Width:8mm; Transition Frequency ft:100MHz; Voltage Vcbo:50V TRANSISTOR, NPN/PNP, DUAL , 45V, SC-88; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:200mW; DC Collector Current:100mA; DC Current Gain hFE:200hFE; Transistor Case Style:SC-88; No. Nexperia Bc847Bpn,115.
Nexperia Bc847Bs,115.of Transistors:2; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:200mW; Power Dissipation per device Max:300mW; SMD Marking:1Ft; Tape Width:8mm; Transition Frequency ft:100MHz; Voltage Vcbo:50V TRANSISTOR, DUAL, NPN, 45V, SC-88; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:200hFE; Transistor Case Style:SC-88; No.
Nexperia Bc847C,215.of Transistors:1; Noise Factor Max:10dB; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; SMD Marking:1G; Termination Type:Surface Mount Device; Voltage Vcbo:50V TRANSISTOR, NPN, 45V, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:420hFE; Transistor Case Style:SOT-23; No.
of Transistors:1; Noise Factor Max:10dB; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:200mW; SMD Marking:1G; Termination Type:Surface Mount Device; Voltage Vcbo:50V TRANSISTOR, NPN, SOT-323; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:100MHz; Power Dissipation Pd:200mW; DC Collector Current:100mA; DC Current Gain hFE:420hFE; Transistor Case Style:SOT-323; No. Nexperia Bc847Cw,115.
1A, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:520hFE; Transistor Case Style:SOT-23; No. Nexperia Bc849C,215.of Transistors:1; Noise Factor Max:4dB; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; SMD Marking:2C; Termination Type:Surface Mount Device; Voltage Vcbo:30V TRANSISTOR, NPN, 30V, 0.
Nexperia Bc847B,215.of Transistors:1; Noise Factor Max:10dB; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:200mW; SMD Marking:1F; Termination Type:Surface Mount Device; Voltage Vcbo:50V TRANSISTOR, NPN, 45V, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:200hFE; Transistor Case Style:TO-236AB; No.
of Transistors:2; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:200mW; Power Dissipation per device Max:300mW; SMD Marking:13t; Tape Width:8mm; Transition Frequency ft:100MHz; Voltage Vcbo:50V TRANSISTOR, NPN/PNP, DUAL , 45V, SC-88; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:200mW; DC Collector Current:100mA; DC Current Gain hFE:200hFE; Transistor Case Style:SC-88; No.
Nexperia Bc847Bs,115.of Transistors:2; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:200mW; Power Dissipation per device Max:300mW; SMD Marking:1Ft; Tape Width:8mm; Transition Frequency ft:100MHz; Voltage Vcbo:50V TRANSISTOR, DUAL, NPN, 45V, SC-88; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:200hFE; Transistor Case Style:SC-88; No.
of Transistors:1; Noise Factor Max:10dB; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:200mW; SMD Marking:1G; Termination Type:Surface Mount Device; Voltage Vcbo:50V TRANSISTOR, NPN, SOT-323; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:100MHz; Power Dissipation Pd:200mW; DC Collector Current:100mA; DC Current Gain hFE:420hFE; Transistor Case Style:SOT-323; No. Nexperia Bc847Cw,115.
of Transistors:1; Noise Factor Max:4dB; Operating Temperature Min:-65°C; SMD Marking:2F; Termination Type:Surface Mount Device; Voltage Vcbo:50V TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:-; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:290hFE; Transistor Case Style:SOT-23; No. Nexperia Bc850B,215.
Nexperia Bc850C,215.of Transistors:1; Noise Factor Max:3dB; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; SMD Marking:2G; Termination Type:Surface Mount Device; Voltage Vcbo:50V TRANSISTOR, NPN, 45V, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:420hFE; Transistor Case Style:TO-236AB; No.
Nexperia Bc856B,215.of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; Power Dissipation per device Max:250mW; SMD Marking:3B; Tape Width:8mm; Termination Type:Surface Mount Device; Voltage Vcbo:80V TRANSISTOR, PNP, -65V,SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-65V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:-100mA; DC Current Gain hFE:220hFE; Transistor Case Style:SOT-23; No.
of Transistors:1; Noise Factor Max:10dB; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; SMD Marking:3H; Termination Type:Surface Mount Device; Voltage Vcbo:50V TRANSISTOR, PNP, 45V, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:-100mA; DC Current Gain hFE:125hFE; Transistor Case Style:SOT-23; No. Nexperia Bc857,215.
of Transistors:1; Noise Factor Max:4dB; Operating Temperature Min:-65°C; SMD Marking:2F; Termination Type:Surface Mount Device; Voltage Vcbo:50V TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:-; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:290hFE; Transistor Case Style:SOT-23; No. Nexperia Bc850B,215.
Nexperia Bc850C,215.of Transistors:1; Noise Factor Max:3dB; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; SMD Marking:2G; Termination Type:Surface Mount Device; Voltage Vcbo:50V TRANSISTOR, NPN, 45V, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:420hFE; Transistor Case Style:TO-236AB; No.
of Transistors:1; Noise Factor Max:10dB; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; SMD Marking:3D; Termination Type:Surface Mount Device TRANSISTOR, PNP, -65V, -0. Nexperia Bc856,215.1A, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-65V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:-100mA; DC Current Gain hFE:125hFE; Transistor Case Style:SOT-23; No.
of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; Power Dissipation per device Max:250mW; SMD Marking:3B; Tape Width:8mm; Termination Type:Surface Mount Device; Voltage Vcbo:80V TRANSISTOR, PNP, -65V,SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-65V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:-100mA; DC Current Gain hFE:220hFE; Transistor Case Style:SOT-23; No. Nexperia Bc856B,215.
of Transistors:1; Noise Factor Max:10dB; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; SMD Marking:3H; Termination Type:Surface Mount Device; Voltage Vcbo:50V TRANSISTOR, PNP, 45V, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:-100mA; DC Current Gain hFE:125hFE; Transistor Case Style:SOT-23; No. Nexperia Bc857,215.
of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; SMD Marking:3E; Termination Type:Surface Mount Device; Voltage Vcbo:50V TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:-; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:125hFE; Transistor Case Style:SOT-23; No. Nexperia Bc857A,215.
of Transistors:1; Noise Factor Max:10dB; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; SMD Marking:3F; Termination Type:Surface Mount Device; Voltage Vcbo:50V TRANSISTOR, PNP, 45V, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:-100mA; DC Current Gain hFE:220hFE; Transistor Case Style:SOT-23; No. Nexperia Bc857B,215.
Nexperia Bc857Bs,115.of Transistors:2; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:200mW; Power Dissipation per device Max:300mW; SMD Marking:3Ft; Tape Width:8mm; Voltage Vcbo:50V TRANSISTOR, DUAL, PNP, SC-88; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:200mW; DC Collector Current:-100mA; DC Current Gain hFE:200hFE; Transistor Case Style:SC-88; No.
of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; SMD Marking:4C; Termination Type:Surface Mount Device; Voltage Vcbo:30V TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency ft:-; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:420hFE; Transistor Case Style:SOT-23; No. Nexperia Bc859C,215.
of Transistors:1; Noise Factor Max:3dB; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; SMD Marking:4G; Termination Type:Surface Mount Device; Voltage Vcbo:50V TRANSISTOR, PNP, 45V, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:420hFE; Transistor Case Style:SOT-23; No. Nexperia Bc860C,215.
Nexperia Bc857A,215.of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; SMD Marking:3E; Termination Type:Surface Mount Device; Voltage Vcbo:50V TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:-; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:125hFE; Transistor Case Style:SOT-23; No.