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Nexperia Bc850B,215

About The of Transistors:1; Noise Factor Max:4dB; Operating Temperature Min:-65°C; SMD Marking:2F; Termination Type:Surface Mount Device; Voltage Vcbo:50V. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):250mV; Continuous Collector Current Ic Max:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:2mA; Device Marking:BC850B; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:100MHz; Hfe Min:200; No

TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:-; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:290hFE; Transistor Case Style:SOT-23; No. of Transistors:1; Noise Factor Max:4dB; Operating Temperature Min:-65°C; SMD Marking:2F; Termination Type:Surface Mount Device; Voltage Vcbo:50V of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):250mV; Continuous Collector Current Ic Max:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:2mA; Device Marking:BC850B; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:100MHz; Hfe Min:200; No.

Semiconductors - Discretes

Nexperia Bc850B,215

of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):250mV; Continuous Collector Current Ic Max:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:2mA; Device Marking:BC849C; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:100MHz; Hfe Min:420; No.
of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):250mV; Continuous Collector Current Ic Max:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:2mA; Device Marking:BC850C; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:100MHz; Hfe Min:420; No.
More from Of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):250mV; Continuous Collector Current Ic Max:100mA; Current Ic Continuous A Max:100mA; Current Ic HFE:2mA; Device Marking:BC850B; Gain Bandwidth Ft Min:100MHz; Gain Bandwidth Ft Typ:100MHz; Hfe Min:200; No. | NEXPERIA
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Semiconductors - Discretes

Specifications of Nexperia Bc850B,215

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Nexperia Bc850B,215
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Rating :- 8.01 /10
Votes :- 54
of Pins:3Pins; Operating Temperature Max:150°C; Product Range:BC856 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):-300mV; Continuous Collector Current Ic Max:-100mA; Current Ic hFE:2mA; Device Marking:BC856; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:150MHz; Hfe Min:125; No.

of Pins:3Pins; Operating Temperature Max:150°C; Product Range:BC856 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):-300mV; Continuous Collector Current Ic Max:-100mA; Current Ic hFE:2mA; Device Marking:BC856; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:150MHz; Hfe Min:125; No.

Nexperia Bc856,215.of Transistors:1; Noise Factor Max:10dB; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; SMD Marking:3D; Termination Type:Surface Mount Device TRANSISTOR, PNP, -65V, -0.1A, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-65V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:-100mA; DC Current Gain hFE:125hFE; Transistor Case Style:SOT-23; No.

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  • Semicondutores
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  • NEXPERIA
    • of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):250mV; Continuous Collector Current Ic Max:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:2mA; Device Marking:BC850C; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:100MHz; Hfe Min:420; No.

    of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):250mV; Continuous Collector Current Ic Max:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:2mA; Device Marking:BC850C; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:100MHz; Hfe Min:420; No.

    of Transistors:1; Noise Factor Max:3dB; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; SMD Marking:2G; Termination Type:Surface Mount Device; Voltage Vcbo:50V TRANSISTOR, NPN, 45V, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:420hFE; Transistor Case Style:TO-236AB; No. Nexperia Bc850C,215.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA
    • of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):250mV; Continuous Collector Current Ic Max:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:2mA; Device Marking:BC850B; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:100MHz; Hfe Min:200; No.

    of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):250mV; Continuous Collector Current Ic Max:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:2mA; Device Marking:BC850B; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:100MHz; Hfe Min:200; No.

    Nexperia Bc850B,215.of Transistors:1; Noise Factor Max:4dB; Operating Temperature Min:-65°C; SMD Marking:2F; Termination Type:Surface Mount Device; Voltage Vcbo:50V TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:-; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:290hFE; Transistor Case Style:SOT-23; No.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA
    • of Pins:3Pins; Operating Temperature Max:150°C; Product Range:BC857 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):-300mV; Continuous Collector Current Ic Max:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:2mA; Device Marking:BC857; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:100MHz; Hfe Min:125; No.

    of Pins:3Pins; Operating Temperature Max:150°C; Product Range:BC857 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):-300mV; Continuous Collector Current Ic Max:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:2mA; Device Marking:BC857; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:100MHz; Hfe Min:125; No.

    Nexperia Bc857,215.of Transistors:1; Noise Factor Max:10dB; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; SMD Marking:3H; Termination Type:Surface Mount Device; Voltage Vcbo:50V TRANSISTOR, PNP, 45V, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:-100mA; DC Current Gain hFE:125hFE; Transistor Case Style:SOT-23; No.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA
    • of Pins:3Pins; Operating Temperature Max:150°C; Product Range:BC856 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):-300mV; Continuous Collector Current Ic Max:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:2mA; Device Marking:BC856B; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:100MHz; Hfe Min:220; No.

    of Pins:3Pins; Operating Temperature Max:150°C; Product Range:BC856 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):-300mV; Continuous Collector Current Ic Max:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:2mA; Device Marking:BC856B; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:100MHz; Hfe Min:220; No.

    Nexperia Bc856B,215.of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; Power Dissipation per device Max:250mW; SMD Marking:3B; Tape Width:8mm; Termination Type:Surface Mount Device; Voltage Vcbo:80V TRANSISTOR, PNP, -65V,SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-65V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:-100mA; DC Current Gain hFE:220hFE; Transistor Case Style:SOT-23; No.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA
    • of Pins:3Pins; Operating Temperature Max:150°C; Product Range:BC856 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):-300mV; Continuous Collector Current Ic Max:-100mA; Current Ic hFE:2mA; Device Marking:BC856; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:150MHz; Hfe Min:125; No.

    of Pins:3Pins; Operating Temperature Max:150°C; Product Range:BC856 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):-300mV; Continuous Collector Current Ic Max:-100mA; Current Ic hFE:2mA; Device Marking:BC856; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:150MHz; Hfe Min:125; No.

    Nexperia Bc856,215.of Transistors:1; Noise Factor Max:10dB; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; SMD Marking:3D; Termination Type:Surface Mount Device TRANSISTOR, PNP, -65V, -0.1A, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-65V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:-100mA; DC Current Gain hFE:125hFE; Transistor Case Style:SOT-23; No.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA
    • of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):250mV; Continuous Collector Current Ic Max:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:2mA; Device Marking:BC850C; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:100MHz; Hfe Min:420; No.

    of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):250mV; Continuous Collector Current Ic Max:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:2mA; Device Marking:BC850C; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:100MHz; Hfe Min:420; No.

    Nexperia Bc850C,215.of Transistors:1; Noise Factor Max:3dB; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; SMD Marking:2G; Termination Type:Surface Mount Device; Voltage Vcbo:50V TRANSISTOR, NPN, 45V, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:420hFE; Transistor Case Style:TO-236AB; No.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA
    • of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):250mV; Continuous Collector Current Ic Max:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:2mA; Device Marking:BC850B; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:100MHz; Hfe Min:200; No.

    of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):250mV; Continuous Collector Current Ic Max:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:2mA; Device Marking:BC850B; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:100MHz; Hfe Min:200; No.

    of Transistors:1; Noise Factor Max:4dB; Operating Temperature Min:-65°C; SMD Marking:2F; Termination Type:Surface Mount Device; Voltage Vcbo:50V TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:-; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:290hFE; Transistor Case Style:SOT-23; No. Nexperia Bc850B,215.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA
    • of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):250mV; Continuous Collector Current Ic Max:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:2mA; Device Marking:BC850C; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:100MHz; Hfe Min:420; No.

    of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):250mV; Continuous Collector Current Ic Max:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:2mA; Device Marking:BC850C; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:100MHz; Hfe Min:420; No.

    of Transistors:1; Noise Factor Max:3dB; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; SMD Marking:2G; Termination Type:Surface Mount Device; Voltage Vcbo:50V TRANSISTOR, NPN, 45V, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:420hFE; Transistor Case Style:TO-236AB; No.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA
    • of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):250mV; Continuous Collector Current Ic Max:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:2mA; Device Marking:BC850B; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:100MHz; Hfe Min:200; No.

    of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):250mV; Continuous Collector Current Ic Max:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:2mA; Device Marking:BC850B; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:100MHz; Hfe Min:200; No.

    of Transistors:1; Noise Factor Max:4dB; Operating Temperature Min:-65°C; SMD Marking:2F; Termination Type:Surface Mount Device; Voltage Vcbo:50V TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:-; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:290hFE; Transistor Case Style:SOT-23; No.

  • Eletrônicos
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  • NEXPERIA